TEMPERATURE DEPENDENCE OF ELECTRICAL PROPERTIES IN Si-IMPLANTED SEMI-INSULATING GaAs.

被引：0
|
作者：
Shigetomi, Shigeru [1 ]
Matsumori, Tokue [1 ]
机构：
[1] Kurume Univ, Dep of Physics,, Fukuoka, Jpn, Kurume Univ, Dep of Physics, Fukuoka, Jpn
来源：
Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes | 1985年 / 24卷 / 02期
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摘要：
12
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页码：243 / 244
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