ELECTRONIC STATES OF SELECTED DEEP LEVEL DEFECTS IN III-V SEMICONDUCTORS.

被引：0
|
作者：
Hemstreet, L.A.
机构：
来源：
Physica B: Physics of Condensed Matter & C: Atomic, Molecular and Plasma Physics, Optics | 1982年 / 116 B&C卷 / 1-3期
关键词：
SEMICONDUCTING INDIUM COMPOUNDS - Defects;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
The results of self-consistent cluster calculations of the electronic states associated with cation vacancies and anion anti-site defects in InP, GaP, and GaAs are summarized. Also presented and discussed are the results obtained for the multi-electron impurity levels associated with substitutional chromium and iron transition metal atoms in an InP host.
引用
收藏
页码：116 / 120
相关论文
共 50 条
12345