OBSERVATION OF CRYSTAL DEFECTS IN SILICON AND COMPOUND SEMICONDUCTORS BY TRANSMISSION ELECTRON MICROSCOPY (TEM).

An efficient technique of specimen preparation has been developed to observe crystal defects of semiconductor materials such as Si and GaAs by TEM. By using this technique, various defects (precipitation and dislocation networks) in materials at each step of manufacturing processes are observed. Observations of defects in Si devices are made, and some interrelation between defects and electrical characteristics are found. It was confirmed that the TEM is a very useful instrument for failure analysis and development of higher quality semiconductor devices. Micrographs, diagrams, and tabulations include English captions. References to European-language sources are in the source language.