Hydrostatic pressure dependence of the photoluminescence of Si nanocrystals in SiO2

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Harvard Univ, Cambridge, United States [1 ]
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Appl Phys Lett | / 1卷 / 87-89期
关键词：
Annealing - Calculations - Hydrostatic pressure - Ion implantation - Mathematical models - Nanostructured materials - Pressure effects - Pressure measurement - Silica - Silicon;
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摘要：
This paper reports the dependence on hydrostatic pressure of the photoluminescence energy of Si nanocrystals in a SiO2 matrix. The quantum confinement model is also tested by comparing the experimental results with theoretical estimates. The samples are fabricated by implanting Si+ ions into thermally oxidized Si wafers, followed by thermal annealing. The results for two samples are presented.
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