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Defect creation by low-energy ion bombardment on GaAs (001) and Ge (001) surfaces

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作者：
Kuronen, A. [1 ]
Tarus, J. [2 ]
Nordlund, K. [2 ]
机构：
[1] Helsinki University of Technology, Lab. of Compl. Eng., P.O. Box 9400, Fin-02015 HUT, Finland
[2] University of Helsinki, Accel. Lab., P.O. Box 47, Univ. H., Fin-00014, Finland
来源：
Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms | 1999年 / 153卷 / 1-4期
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页码：209 / 212
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