Influence of electron irradiation on the lead sulfide film surface and indium-lead sulfide interface

被引：0
|
作者：
Zimin, S.P. [1 ]
Zaikina, R.F. [1 ]
Borzova, G.A. [1 ]
机构：
[1] Yaroslavl State Univ, Yaroslavl, Russia
来源：
Surface Investigation X-Ray, Synchrotron and Neutron Techniques | 1998年 / 13卷 / 10期
关键词：
Auger electron spectroscopy - Electron beams - Electron irradiation - Epitaxial growth - Interfaces (materials) - Phase transitions - Radiation effects - Secondary ion mass spectrometry - Semiconducting indium - Semiconducting lead compounds - Sulfur dioxide - Surface structure;
D O I：
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学科分类号：
摘要：
Distribution profiles of chemical elements in epitaxial lead sulfide films after electron beam irradiation with an energy of 4 MeV and fluence of 1.1017 cm-2 have been studied by Auger and secondary ion mass spectroscopy. The irradiation has been established to result in phase transformations in the subsurface region of the epitaxial layer and the appearance of sulfur and lead oxides. Changes in the elemental compositions at the indium-lead sulfide thin-film structure under electron irradiation have been described. These changes are related to the appearance of an intermediate layer containing lead and oxygen.
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页码：1309 / 1312
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