TEM study of crystal growth in a Y-Si-Al-O-N glass ceramic system

被引：0

作者：

Young, W.T. ^{[1
]}

Falk, L.K.L. ^{[1
]}

Lemercier, H. ^{[2
]}

Hampshire, S. ^{[2
]}

机构：

[1] Department of Experimental Physics, Chalmers University of Technology, SE-412 96 Göteborg, Sweden

[2] Materials Research Centre, University of Limerick, Limerick, Ireland

来源：

| 2000年 / Trans Tech Publ, Uetikon-Zuerich, Switzerland卷 / 325期

关键词：

Ceramic materials - Crystal growth - Crystal structure - Heat treatment - Impurities - Nucleation - Silicon nitride - Transition metals;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

A glass of initial composition Y15.2Si14.66Al8.69O54.07N7.38 has been prepared and heat treated at temperatures of 965 °C and 1050 °C. Glasses heated only at 965 °C for times up to 10 hours contained approximately 40 nm clusters of silicon rich crystals often nucleating on transition metal impurities. Glasses heated at 965 °C for 1 hour followed by 1050 °C for times up to 10 hours contained lenticular crystals with a hexagonal structure and d-spacings corresponding to B-phase, and with a broad range of compositions. Crystal growth was preferential in directions perpendicular to the c-axis.

引用

共 50 条

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