TEM study of crystal growth in a Y-Si-Al-O-N glass ceramic system

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作者
Young, W.T. [1 ]
Falk, L.K.L. [1 ]
Lemercier, H. [2 ]
Hampshire, S. [2 ]
机构
[1] Department of Experimental Physics, Chalmers University of Technology, SE-412 96 Göteborg, Sweden
[2] Materials Research Centre, University of Limerick, Limerick, Ireland
关键词
Ceramic materials - Crystal growth - Crystal structure - Heat treatment - Impurities - Nucleation - Silicon nitride - Transition metals;
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摘要
A glass of initial composition Y15.2Si14.66Al8.69O54.07N7.38 has been prepared and heat treated at temperatures of 965 °C and 1050 °C. Glasses heated only at 965 °C for times up to 10 hours contained approximately 40 nm clusters of silicon rich crystals often nucleating on transition metal impurities. Glasses heated at 965 °C for 1 hour followed by 1050 °C for times up to 10 hours contained lenticular crystals with a hexagonal structure and d-spacings corresponding to B-phase, and with a broad range of compositions. Crystal growth was preferential in directions perpendicular to the c-axis.
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