HIGH-FREQUENCY CHARACTERISTICS OF DIRECTLY MODULATED InGaAsP RIDGE WAVEGUIDE AND BURIED HETEROSTRUCTURE LASERS.

被引：0

作者：

Tucker, Rodney S. ^{[1
]}

Kaminow, Ivan P. ^{[1
]}

机构：

[1] AT&T, Bell Lab, Crawford Hill, Lab, Holmdel, NJ, USA, AT&T, Bell Lab, Crawford Hill Lab, Holmdel, NJ, USA

来源：

Journal of Lightwave Technology | 1984年 / LT-2卷 / 04期

关键词：

SEMICONDUCTING GALLIUM ARSENIDE - Applications - SEMICONDUCTING INDIUM COMPOUNDS - Applications - WAVEGUIDES; OPTICAL;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

The high-frequency modulation characteristics of InGaAsP ridge waveguide lasers at 1. 55 micrometer and etched mesa buried heterostructure (EMBH) lasers at 1. 3 micrometer are investigated. Small-signal and large-signal circuit models are developed for both devices, and the main factors which influence the high-frequency modulation response are established. It is shown that the electrical parasitics in the chip dominate the small-signal frequency response of the EMBH laser and limit the large-signal turn-on and turn-off times. The small-signal and large-signal responses of both devices show strong damping of the relaxation oscillations. This damping can be modeled accurately using field-dependent optical gain compression in the rate equation.

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