Intense light emission in diffused porous silicon junctions

被引：3

作者：

Jain, V.K. ^{[1
]}

Gupta, Amita ^{[1
]}

Kumar, Adarsh ^{[1
]}

Singhal, G.K. ^{[1
]}

Kumar, Vikram ^{[1
]}

机构：

[1] Solid State Physics Lab, Delhi, India

来源：

Pure and applied optics | 1994年 / 3卷 / 03期

关键词：

Diffusion in solids - Electric contacts - Electric resistance - Electric variables measurement - Evaporation - Heat treatment - Impurities - Porous materials - Semiconducting silicon - Semiconductor doping - Semiconductor junctions;

D O I：

10.1088/0963-9659/3/3/004

中图分类号：

学科分类号：

摘要：

The diffusion of a counter dopant has been done in porous silicon. The p+n and n+p junctions formed give a sharp peak in photoluminescence instead of a broad peak. We report the first operation of bright light emitting p-n junctions in porous silicon, at low voltage and current. The diffusion makes the resistance of the porous layer very low, which provides the possibility of making many devices.

引用

页码：225 / 229

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