Optimizing polysilicon thin-film transistor performance with chemical-mechanical polishing and hydrogenation

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Hong Kong Univ of Science and, Technology, Kowloon, Hong Kong [1 ]
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IEEE Electron Device Lett | / 11卷 / 518-520期
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Manuscript received April 5; 1996. This work was supported by Hong Kong Research Grant RGC-HKUST 550/94E. The authors are with the Department of Electrical and Electronic Engineering; Hong Kong University of Science and Technology. Clear Water Bay; Kowloon; Hong Kong. Publisher Item Identifier S 0741-3 106(96)08311-5;
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