Hydrogenation effects on the electrical and optical properties of p-type ZnSySe1-y epilayers grown on GaAs (100) substrates

被引:0
|
作者
Kwangwoon Univ, Seoul, Korea, Republic of [1 ]
机构
来源
Solid State Commun | / 8卷 / 587-591期
关键词
Number:; BSRI-98-2423; Acronym:; MOE; Sponsor: Ministry of Education; Kenya;
D O I
暂无
中图分类号
学科分类号
摘要
引用
收藏
相关论文
共 50 条
  • [31] Optical properties of GaInP/GaAs:Er,O/GaInP laser diodes on p-type GaAs substrates grown by organometallic vapor phase epitaxy
    Ota, Y.
    Fujii, K.
    Ito, Y.
    Kawasaki, T.
    Noguchi, K.
    Tsuji, T.
    Terai, Y.
    Fujiwara, Y.
    IUMRS-ICA 2008 SYMPOSIUM AA. RARE-EARTH RELATED MATERIAL PROCESSING AND FUNCTIONS, 2008, 1
  • [32] P-type Ge epitaxy on GaAs (100) substrate grown by MOCVD
    Jin, Y. J.
    Chia, C. K.
    Liu, H. F.
    Wong, L. M.
    Chai, J. W.
    Chi, D. Z.
    Wang, S. J.
    APPLIED SURFACE SCIENCE, 2016, 376 : 236 - 240
  • [33] Electrical and optical properties of p-type InN
    Mayer, Marie A.
    Choi, Soojeong
    Bierwagen, Oliver
    Smith, Holland M., III
    Haller, Eugene E.
    Speck, James S.
    Walukiewicz, Wladek
    JOURNAL OF APPLIED PHYSICS, 2011, 110 (12)
  • [34] Electrical and optical properties of p-type InGaN
    Pantha, B. N.
    Sedhain, A.
    Li, J.
    Lin, J. Y.
    Jiang, H. X.
    APPLIED PHYSICS LETTERS, 2009, 95 (26)
  • [35] Electrical and optical properties of p-type ZnO
    Look, DC
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2005, 20 (04) : S55 - S61
  • [36] Optical and electrical properties of MBE grown cubic GaN/GaAs epilayers doped by Si
    As, DJ
    Richter, A
    Busch, J
    Schöttker, B
    Lübbers, M
    Mimkes, J
    Schikora, D
    Lischka, K
    Kriegseis, W
    Burkhardt, W
    Meyer, BK
    MRS INTERNET JOURNAL OF NITRIDE SEMICONDUCTOR RESEARCH, 2000, 5
  • [37] Investigations of p-type signal for ZnO thin films grown on (100) GaAs substrates by pulsed laser deposition
    Rogers, DJ
    Teherani, FH
    Monteiro, T
    Soares, M
    Neves, A
    Carmo, M
    Pereira, S
    Correia, MR
    Lusson, A
    Alves, E
    Barradas, NP
    Morrod, JK
    Prior, KA
    Kung, P
    Yasan, A
    Razeghi, M
    PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 3, NO 4, 2006, 3 (04): : 1038 - +
  • [38] Electrical properties of n- and p-type doped epitaxial GaAs layers grown by OMVPE
    Modak, P
    Hudait, MK
    Hardikar, S
    Krupanidhi, SB
    PHYSICS OF SEMICONDUCTOR DEVICES, VOLS 1 AND 2, 1998, 3316 : 336 - 340
  • [39] Electrical characteristics of As-doped p-type HgCdTe epilayers grown on CdZnTe(211)B substrates by molecular beam epitaxy
    Yang, B
    Aqariden, F
    Grein, CH
    Jandaska, A
    Lee, TS
    Nemani, A
    Rujirawat, S
    Shi, XH
    Sumstine, M
    Velicu, S
    Sivananthan, S
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1999, 17 (03): : 1205 - 1208
  • [40] ELECTRICAL AND OPTICAL PROPERTIES OF GAAS INJECTION LASERS WITH CLOSELY COMPENSATED P-TYPE REGION
    KRESSEL, H
    HAWRYLO, FZ
    JOURNAL OF APPLIED PHYSICS, 1968, 39 (01) : 205 - &