Surface-related phenomena in the direct bonding of silicon and fused-silica wafer pairs

被引:0
|
作者
Spierings, G.A.C.M.
Haisma, J.
Michielsen, T.M.
机构
来源
关键词
D O I
暂无
中图分类号
学科分类号
摘要
引用
收藏
页码:47 / 63
相关论文
共 50 条
  • [11] RF RECRYSTALLIZATION OF POLYCRYSTALLINE SILICON ON FUSED-SILICA FOR MOSFET DEVICES
    KOBAYASHI, Y
    FUKAMI, A
    SUZUKI, T
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1984, 131 (05) : 1188 - 1194
  • [12] ON THE FORMATION OF SILICON OXYNITRIDE BY ION-IMPLANTATION IN FUSED-SILICA
    CARNERA, A
    MAZZOLDI, P
    BOSCOLOBOSCOLETTO, A
    CACCAVALE, F
    BERTONCELLO, R
    GRANOZZI, G
    SPAGNOL, I
    BATTAGLIN, G
    JOURNAL OF NON-CRYSTALLINE SOLIDS, 1990, 125 (03) : 293 - 301
  • [13] DIRECT HPLC/MS USING A FUSED-SILICA CAPILLARY INTERFACE
    ROSEN, RT
    DZIEDZIC, JE
    ABSTRACTS OF PAPERS OF THE AMERICAN CHEMICAL SOCIETY, 1985, 189 (APR-): : 14 - PEST
  • [14] Wafer direct bonding of compound semiconductors and silicon at room temperature by the surface activated bonding method
    Chung, Taek Ryong
    Yang, Liu
    Hosoda, Naoe
    Takagi, Hidegi
    Suga, Tadatomo
    Applied Surface Science, 1997, 117-118 : 808 - 812
  • [15] Wafer direct bonding of compound semiconductors and silicon at room temperature by the surface activated bonding method
    Chung, TR
    Yang, L
    Hosoda, N
    Takagi, H
    Suga, T
    APPLIED SURFACE SCIENCE, 1997, 117 : 808 - 812
  • [16] Removal of surface-related wave phenomena - The marine case
    vanBorselen, RG
    Fokkema, JT
    vandenBerg, PM
    GEOPHYSICS, 1996, 61 (01) : 202 - 210
  • [17] Evaluation of surface-related phenomena using sedimentation tests
    Fam, M
    Dusseault, M
    GEOTECHNICAL TESTING JOURNAL, 1998, 21 (03): : 180 - 184
  • [18] COOL PLASMA ACTIVATED SURFACE IN SILICON-WAFER DIRECT BONDING TECHNOLOGY
    SUN, GL
    ZHAN, J
    TONG, QY
    XIE, SJ
    CAI, YM
    LU, SJ
    JOURNAL DE PHYSIQUE, 1988, 49 (C-4): : 79 - 82
  • [19] Trace determination of iron on a silicon wafer surface by silicon direct bonding and neutron activation analysis
    Shigematsu, T
    Polasek, M
    Yonezawa, H
    JOURNAL OF RADIOANALYTICAL AND NUCLEAR CHEMISTRY-ARTICLES, 1996, 203 (01): : 3 - 9
  • [20] Trace determination of iron on a silicon wafer surface by silicon direct bonding and neutron activation analysis
    Shigematsu, T.
    Polasek, M.
    Yonezawa, H.
    Journal of Radioanalytical and Nuclear Chemistry, 1996, 203 (01): : 3 - 9