A study on surface morphologies of (001) homoepitaxial diamond films

被引：0
|
作者：
Materials Research Laboratory, Pennsylvania State University, University Park, PA 16802, United States [1 ]
机构：
来源：
Diamond Relat. Mat. | / 1卷 / 130-145期
关键词：
This work was supported by the National Science Foundation trader Grant No. DMR-9522566 and by the Office of Naval Research with funding from BMDO trader Grant No. N000014o95o !-0905;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
68
引用
收藏
相关论文
共 50 条
  • [21] Carbide contacts on homoepitaxial diamond films
    Muret, P
    Pruvost, F
    Saby, C
    Lucazeau, E
    Tan, TAN
    Gheeraert, E
    Deneuville, A
    DIAMOND AND RELATED MATERIALS, 1999, 8 (2-5) : 961 - 965
  • [22] Homoepitaxial diamond films with large terraces
    Hayashi, K
    Yamanaka, S
    Okushi, H
    Kajimura, K
    APPLIED PHYSICS LETTERS, 1996, 68 (09) : 1220 - 1222
  • [23] Carbide contacts on homoepitaxial diamond films
    Muret, P.
    Pruvost, F.
    Saby, C.
    Lucazeau, E.
    Tan, T.A.Nguyen
    Gheeraert, E.
    Deneuville, A.
    Diamond and Related Materials, 1999, 8 (02): : 961 - 965
  • [24] Surface morphologies of homoepitaxial ZnO thin films on non-miscut ZnO substrates
    Wei, M.
    Boutwell, R. C.
    Schoenfeld, W. V.
    APPLIED SURFACE SCIENCE, 2013, 277 : 263 - 267
  • [25] Field emission characteristics of diamond films with different surface morphologies
    Ji, H
    Jin, ZS
    Wang, JY
    Lu, XY
    Gu, CZ
    Liu, BB
    Jin, WC
    Gao, CX
    Yuan, G
    Wang, WB
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1999, 17 (02): : 684 - 687
  • [26] Hillock-free heavily boron-doped homoepitaxial diamond films on misoriented (001) substrates
    Tokuda, Norio
    Umezawa, Hitoshi
    Yamabe, Kikuo
    Okushi, Hideyo
    Yamasaki, Satoshi
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2007, 46 (4A): : 1469 - 1470
  • [27] X-ray diffraction analysis of strain and mosaic structure in (001) oriented homoepitaxial diamond films
    Alexander, WB
    Pehrsson, PE
    Black, D
    Butler, JE
    III-NITRIDE, SIC AND DIAMOND MATERIALS FOR ELECTRONIC DEVICES, 1996, 423 : 305 - 310
  • [28] Hillock-free heavily boron-doped homoepitaxial diamond films on misoriented (001) substrates
    Tokuda, Norio
    Umezawa, Hitoshi
    Yamabe, Kikuo
    Okushi, Hideyo
    Yamasaki, Satoshi
    Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 2007, 46 (4 A): : 1469 - 1470
  • [29] A study of the origin of band-A emission in homoepitaxial diamond thin films
    Takeuchi, D
    Watanabe, H
    Yamanaka, S
    Okushi, H
    Kajimura, K
    Sawada, H
    Ichinose, H
    Sekiguchi, T
    OPTICAL MICROSTRUCTURAL CHARACTERIZATION OF SEMICONDUCTORS, 2000, 588 : 87 - 92
  • [30] Diamond Diode Structures Based on Homoepitaxial Films
    Rodionov, N. B.
    Pal', A. F.
    Bol'shakov, A. P.
    Ral'chenko, V. G.
    Khmel'nitskiy, R. A.
    Dravin, V. A.
    Malykhin, S. A.
    Altukhov, I. V.
    Kagan, M. S.
    Paprotskiy, S. K.
    JOURNAL OF COMMUNICATIONS TECHNOLOGY AND ELECTRONICS, 2018, 63 (07) : 828 - 834
12345