Width effect on hot-carrier-induced degradation for 90 nm partially depleted SOI CMOSFETs

被引：0
|
作者：
Lai, Chieh-Ming [1 ]
Fang, Yean-Kuen [1 ]
Pan, Shing-Tai [2 ]
Yeh, Wen-Kuan [3 ]
机构：
[1] Institute of Microelectronics, National Cheng Kung University, No, 1 University Road, Tainan, 70101, Taiwan
[2] Department of Computer Science Information Engineering, Shu Te University, No. 59, Hun Shang Rd., Yen Chao, Kaohsiung 82442, Taiwan
[3] Department of Electrical Engineering, National University of Kaohsiung, No. 700, Kaohsiung University Rd., Nan-Tzu Dist., Kaohsiung 811, Taiwan
来源：
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | 2005年 / 44卷 / 4 B期
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摘要：
13
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页码：2361 / 2365
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