THIN-FILM ELECTROLUMINESCENT DEVICE EMPLOYING TA2O5 RF SPUTTERED INSULATING FILM.

IN ORDER TO FABRICATE LOW-VOLTAGE-DRIVEN HIGH-BRIGHTNESS THIN-FILM ELECTROLUMINESCENT DEVICES, THE EMISSION CHARACTERISTICS OF DEVICES EMPLOYING LOW DIELECTRIC LOSS TA//2O//5 RF-SPUTTERED INSULATING FILMS HAVE BEEN STUDIED IN COMPARISON WITH THOSE OF DEVICES EMPLOYING Y//2O//3, SM//2O//3 AND AL//2O//3 DEPOSITED INSULATORS. IT WAS FOUND THAT THE DEVICES EMPLOYING TA//2O//5 RF-SPUTTERED FILMS EXHIBITED HIGHER BRIGHTNESS, LOWER DRIVING VOLTAGE AND HIGHER STABILITY THAN THE OTHER DEVICES. IN ADDITION, NO AGING WAS OBSERVED IN THE TA//2O//5 INSULATED DEVICES. THESE RESULTS INDICATE THAT THE TA//2O//5 RF-SPUTTERED FILM IS SUITABLE AS THE INSULATING FILM IN THIN-FILM ELECTROLUMINESCENT DEVICES, AND THAT THE PROPERTIES OF THE INSULATING FILM ARE CLOSELY RELATED TO THE EMISSIONCHARACTERISTICS IN SUCH DEVICES.