Novel 1.55 μm VCSELs with top metamorphic GaAs/GaAlAs and bottom InP/InGaAsP Bragg reflectors

被引：0

作者：

Starck, C. ^{[1
]}

Boucart, J. ^{[1
]}

Plais, A. ^{[1
]}

Bouche, N. ^{[1
]}

Derouin, E. ^{[1
]}

Pinquier, A. ^{[1
]}

Gaborit, F. ^{[1
]}

Bonnet-Gamard, J. ^{[1
]}

Fortin, C. ^{[1
]}

Goldstein, L. ^{[1
]}

Brillouet, F. ^{[1
]}

Salet, P. ^{[1
]}

Carpentier, D. ^{[1
]}

Jacquet, J. ^{[1
]}

机构：

[1] OPTO PLUS, Marcoussis, France

来源：

Conference on Optical Fiber Communication, Technical Digest Series | 1999年

关键词：

D O I：

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摘要：

引用

共 29 条

[21] 1.55 mu m vertical-cavity surface-emitting lasers with wafer-fused InGaAsP/InP-GaAs/AlAs DBRs
Ohiso, Y
Amano, C
Itoh, Y
Tateno, K
Tadokoro, T
Takenouchi, H
Kurokawa, T
ELECTRONICS LETTERS, 1996, 32 (16) : 1483 - 1484
[22] Room-temperature pulsed operation of 1.3 μm vertical-cavity lasers including bottom InGaAsP/InP multilayer Bragg mirrors
Salet, P
Gaborit, F
Pagnod-Rossiaux, P
Plais, A
Derouin, E
Pasquier, J
Jacquet, J
ELECTRONICS LETTERS, 1997, 33 (24) : 2048 - 2049
[23] 1.55μm bottom-emitting InAlGaAs VCSELs with Al2O3/a-Si thin-film pairs as top mirror
Song, HW
Han, WS
Kim, JH
Kwon, OK
Ju, YG
Lee, JH
KoPark, SH
Kang, SG
ELECTRONICS LETTERS, 2004, 40 (14) : 868 - 869
[24] 2 mW single mode operation of 1.55 μm InAlGaAs/InP-AlGaAs/GaAs wafer fused tunable VCSELs optically pumped with 980 nm lasers
Syrbu, A
Lakovlev, V
Suruceanu, G
Berseth, CA
Rudra, A
Mircea, A
Mereuta, A
Tadeoni, S
Kapon, E
2003 INTERNATIONAL CONFERENCE INDIUM PHOSPHIDE AND RELATED MATERIALS, CONFERENCE PROCEEDINGS, 2003, : 202 - 203
[25] An all-epitaxial InP-based 1.55μm VCSEL process with defect-free AlxOy/GaAs distributed Bragg reflector mirrors
Gebretsadik, H
Kamath, K
Bhattacharya, P
Caneau, C
Bhat, R
1998 INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS - CONFERENCE PROCEEDINGS, 1998, : 307 - 309
[26] InAs/InP quantum-dot pillar microcavities using SiO2/Ta2O5 Bragg reflectors with emission around 1.55 μm
Dalacu, D
Poitras, D
Lefebvre, J
Poole, PJ
Aers, GC
Williams, RL
APPLIED PHYSICS LETTERS, 2004, 84 (17) : 3235 - 3237
[27] InP-based 1.5μm vertical cavity surface emitting laser with epitaxially grown defect-free GaAs-based distributed Bragg reflectors
Gebretsadik, H
Bhattacharya, PK
Kamath, KK
Qasaimeh, OR
Klotzkin, DJ
Caneau, C
Bhat, R
ELECTRONICS LETTERS, 1998, 34 (13) : 1316 - 1318
[28] Acceptance of wider oblique angle of incidence in Fabry-Perot optical filter/modulator structures via index compensation in InGaAs-GaAs (980 nm) and InGaAsP-InP (1.55 μm) multiple quantum well cavities
Jain, F
Cheung, S
Huang, W
INTERNATIONAL JOURNAL OF INFRARED AND MILLIMETER WAVES, 2000, 21 (05): : 759 - 769
[29] Acceptance of Wider Oblique Angle of Incidence in Fabry-Perot Optical Filter/Modulator Structures via Index Compensation in InGaAs-GaAs (980 nm) and InGaAsP-InP (1.55 μm) Multiple Quantum Well Cavities
F. Jain
S. Cheung
W. Huang
International Journal of Infrared and Millimeter Waves, 2000, 21 : 759 - 769

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