共 50 条
- [41] Selective area growth of cubic GaN on 3C-SiC (001) by metalorganic molecular beam epitaxy 1600, JJAP, Tokyo (39):
- [42] Selective area growth of cubic GaN on 3C-SiC (001) by metalorganic molecular beam epitaxy JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 2000, 39 (11A): : L1081 - L1083