Time-resolved photoluminescence characterization of GaAs and AlGaAs on Si substrate grown by MOCVD

被引：0
|
作者：
Soga, T. [1 ]
Uehiro, M. [1 ]
Azuma, Y. [1 ]
Yang, M. [1 ]
Jimbo, T. [1 ]
Umeno, M. [1 ]
机构：
[1] Nagoya Inst of Technology, Nagoya, Japan
来源：
Solar Energy Materials and Solar Cells | 1994年 / 35卷 / 1 -4 pt 2期
关键词：
Minority carrier lifetime - Thermal cycle annealing (TCA) - Time resolved photoluminescence;
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摘要：
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页码：75 / 81
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