HOT-ELECTRON EFFECTS ON CHANNEL THERMAL NOISE IN FINE-LINE NMOS FIELD-EFFECT TRANSISTORS.

被引：0

作者：

Jindal, R.P. ^{[1
]}

机构：

[1] AT&T Bell Lab, Murray Hill, NJ,, USA, AT&T Bell Lab, Murray Hill, NJ, USA

来源：

IEEE Transactions on Electron Devices | 1986年 / ED-33卷 / 09期

关键词：

ELECTRONS;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

Submicrometer NMOSFETs exhibit excess channel thermal noise. This excess noise increases with increasing drain-to-source voltage and with decreasing channel length. A strong correlation between high electric field and excess noise strongly suggests that hot electrons are being responsible for this excess noise.

引用

页码：1395 / 1397

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