HOT-ELECTRON NOISE IN III-V HETEROJUNCTION FIELD-EFFECT TRANSISTORS

被引：4
|
作者：
ZIMMERMANN, J
CAPPY, A
机构：
[1] Univ. des Sci. et Tech. de Lille-Flandres-Artois, Villeneuve d'Ascq
来源：
SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 1992年 / 7卷 / 3B期
关键词：
D O I：
10.1088/0268-1242/7/3B/122
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The knowledge of hot electron noise properties in FETs and their dependence on biasing conditions and frequency is essential in device optimization. The recent development of submicron gate MODFETs with epitaxial III-V semiconductor heterolayers has considerably complicated the problem of producing accurate device models able to predict at the same time the static and microwave characteristics and the noise results as well. Low cost and fast simulators that can be implemented on small computers are in high demand in the device industry. In this paper we try to describe the present state of this problem.
引用
收藏
页码：B468 / B473
页数：6
相关论文
共 50 条
  • [1] III-V Tunnel Field-Effect Transistors
    Seabaugh, A.
    Chae, S. D.
    Fay, P.
    Hwang, W. S.
    Kosel, T.
    Li, R.
    Liu, Q.
    Lu, Y.
    Vasen, T.
    Wistey, M.
    Xing, H.
    Zhou, G.
    Zhang, Q.
    [J]. ULSI PROCESS INTEGRATION 7, 2011, 41 (07): : 227 - 229
  • [2] HOT-ELECTRON TRANSPORT EFFECTS IN FIELD-EFFECT TRANSISTORS
    GRUBIN, HL
    MCHUGH, TM
    [J]. SOLID-STATE ELECTRONICS, 1978, 21 (01) : 69 - 73
  • [3] VERTICAL FIELD-EFFECT TRANSISTORS IN III-V SEMICONDUCTORS
    RAVNOY, Z
    LU, LT
    KAPON, E
    MUKAI, S
    MARGALIT, S
    YARIV, A
    [J]. APPLIED PHYSICS LETTERS, 1984, 45 (03) : 258 - 260
  • [4] HOT-ELECTRON TRANSPORT EFFECTS IN FIELD-EFFECT TRANSISTORS (FET)
    GRUBIN, HL
    MCHUGH, TM
    [J]. BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1977, 22 (06): : 703 - 703
  • [5] HOT-ELECTRON BEHAVIOR IN III-V SEMICONDUCTORS
    MOORE, JS
    DAS, P
    [J]. BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1981, 26 (03): : 458 - 458
  • [6] A comparative study of work function variations in III-V heterojunction and homojunction tunnel field-effect transistors
    Guan, Yunhe
    Lu, Jiachen
    Zhang, Hao
    Dou, Zhen
    Chen, Haifeng
    Liang, Feng
    [J]. MICROELECTRONICS JOURNAL, 2024, 145
  • [7] HOT-ELECTRON EFFECTS ON CHANNEL THERMAL NOISE IN FINE-LINE NMOS FIELD-EFFECT TRANSISTORS
    JINDAL, RP
    [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1986, 33 (09) : 1395 - 1397
  • [8] Characterization of hot-electron effects on flicker noise in III-V nitride based heterojunctions
    Ho, WY
    Fong, WK
    Surya, C
    Tong, KY
    Lu, LW
    Ge, WK
    [J]. MRS INTERNET JOURNAL OF NITRIDE SEMICONDUCTOR RESEARCH, 1999, 4
  • [9] HETEROSTRUCTURE INSULATED GATE FIELD-EFFECT TRANSISTORS OPERATED IN HOT-ELECTRON REGIME
    MARTINEZ, E
    SHUR, M
    SCHUERMEYER, F
    [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1994, 41 (05) : 854 - 856
  • [10] T-Shaped III-V Heterojunction Tunneling Field-Effect Transistor
    Dubey, Prabhat Kumar
    Kaushik, Brajesh Kumar
    [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 2017, 64 (08) : 3120 - 3125
12345