MINORITY-CARRIER DIFFUSION COEFFICIENTS AND MOBILITIES IN SILICON.

被引：0

作者：

Neugroschel, A. ^{[1
]}

机构：

[1] Univ of Florida, Dep of Electrical, Engineering, Gainesville, FL, USA, Univ of Florida, Dep of Electrical Engineering, Gainesville, FL, USA

来源：

Electron device letters | 1985年 / EDL-6卷 / 08期

关键词：

D O I：

暂无

中图分类号：

学科分类号：

摘要：

引用

页码：425 / 427

共 50 条

[41] EFFECT OF LOCALIZED RECOMBINATION PLANES ON MINORITY-CARRIER DIFFUSION LENGTH IN SILICON SOLAR-CELLS
SHIMOKAWA, R
HAYASHI, Y
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1985, 24 (09): : L736 - L738
[42] COMPARISON OF MINORITY-CARRIER DIFFUSION LENGTH MEASUREMENTS IN SILICON BY THE PHOTOCONDUCTIVE DECAY AND SURFACE PHOTOVOLTAGE METHODS
SARITAS, M
MCKELL, HD
JOURNAL OF APPLIED PHYSICS, 1988, 63 (09) : 4561 - 4567
[43] MEASUREMENT OF MINORITY-CARRIER LIFETIME AND DIFFUSION LENGTH IN SILICON EPITAXIAL LAYERS BY MEANS OF PHOTOCURRENT TECHNIQUE
MULLER, J
BERNT, H
REICHL, H
SOLID-STATE ELECTRONICS, 1978, 21 (08) : 999 - 1003
[44] MEASUREMENT OF MINORITY-CARRIER DIFFUSION-COEFFICIENT IN SILICON BY AC PHOTO-CURRENT METHOD
MOROHASHI, M
SAWAKI, N
SOMATANI, T
AKASAKI, I
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1983, 22 (02): : 276 - 280
[45] EFFECT OF LOCALIZED RECOMBINATION PLANES IN MINORITY-CARRIER DIFFUSION LENGTH IN SILICON SOLAR CELLS.
Shimokawa, Ryuichi
Hayashi, Yutaka
Japanese Journal of Applied Physics, Part 2: Letters, 1985, 24 (09): : 736 - 738
[46] MINORITY-CARRIER EXCLUSION
MANIFACIER, JC
HENISCH, HK
SOLID-STATE ELECTRONICS, 1979, 22 (03) : 279 - 281
[47] MEASURING AND MODELING MINORITY CARRIER TRANSPORT IN HEAVILY DOPED SILICON.
del Alamo, J.
Swirhun, S.
Swanson, R.M.
Solid-State Electronics, 1984, 28 (1-2) : 47 - 54
[48] RADIATION-DAMAGE AND MINORITY-CARRIER LIFETIME IN CRYSTALLINE SILICON
BHORASKAR, VN
DHOLE, SD
SINGH, S
JAHAGIRDAR, SM
SRINIVAS, KS
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1991, 62 (01): : 99 - 102
[49] IMPROVED MINORITY-CARRIER LIFETIME PERFORMANCE IN SILICON FOR ADVANCED APPLICATIONS
FALSTER, RJ
MICROELECTRONIC ENGINEERING, 1992, 17 (1-4) : 463 - 466
[50] MINORITY-CARRIER TRANSPORT IN NONUNIFORMLY DOPED SILICON - AN ANALYTICAL APPROACH
VERHOEF, LA
SINKE, WC
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1990, 37 (01) : 210 - 221

← 1 2 3 4 5 →