Enhanced retention characteristics of Pb(Zr, Ti)O3 capacitors by ozone treatment

被引:0
|
作者
Lee, K.-M. [1 ]
An, H.-G. [1 ]
Lee, J.-K. [1 ]
Lee, Y.-T. [1 ]
Lee, S.-W. [1 ]
Joo, S.-H. [1 ]
Nam, S.-D. [1 ]
Park, K.-S. [1 ]
Lee, M.-S. [1 ]
Park, S.-O. [1 ]
Kang, H.-K. [1 ]
Moon, J.-T. [1 ]
机构
[1] Process Development Team, Semiconductor R and D Division, Samsung Electronics Co., San 24, Nongseo-Ri, Kiheung-Eup, Yongin-City, Kyunggi-Do, Korea, Republic of
来源
| 2001年 / Japan Society of Applied Physics卷 / 40期
关键词
D O I
10.1143/jjap.40.4979
中图分类号
学科分类号
摘要
Capacitors
引用
收藏
相关论文
共 50 条
  • [1] Enhanced retention characteristics of Pb(Zr, Ti)O3 capacitors by ozone treatment
    Lee, KM
    An, HG
    Lee, JK
    Lee, YT
    Lee, SW
    Joo, SH
    Nam, SD
    Park, KS
    Lee, MS
    Park, SO
    Kang, HK
    Moon, JT
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2001, 40 (08): : 4979 - 4983
  • [2] Charge retention characteristics of (Bi,La)4Ti3O12 capacitors:: Comparison with Pb(Zr,Ti)O3 capacitors
    Yoon, JG
    Kim, DJ
    So, YW
    Jo, JY
    Noh, TW
    Song, TK
    Noh, KH
    Lee, SS
    Oh, SH
    Hong, SK
    Park, YJ
    JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2005, 46 (01) : 19 - 23
  • [3] Imprint characteristics of Pt/Pb(Zr,Ti)O3/Ir capacitors
    Kang-Woon Lee
    Won-Jong Lee
    Metals and Materials International, 2006, 12 : 85 - 93
  • [4] Comparison of retention characteristics of Pb(Zr,Ti)O3 (PZT) capacitors fabricated with noble metal electrodes and their oxide electrodes
    Shin, S
    Cho, CR
    Koo, JM
    Kim, SP
    Cho, YJ
    Park, SH
    Lee, JH
    Park, Y
    Lee, JK
    Jo, JY
    Kim, DJ
    Noh, TW
    Yoon, JG
    Kang, BS
    INTEGRATED FERROELECTRICS, 2004, 64 : 169 - 181
  • [5] Sputtered Pb(Zr, Ti)O3 thin films for ferroelectric capacitors
    Sakoda, T
    Aoki, K
    Fukuda, Y
    FERROELECTRIC THIN FILMS VIII, 2000, 596 : 277 - 282
  • [6] Ferroelectric Pb(Zr,Ti)O3 capacitors for nonvolatile FeRAM application
    Hase, Takashi
    Noguchi, Takehiro
    Miyasaka, Yoichi
    NEC Research and Development, 1999, 40 (02): : 210 - 213
  • [7] Ferroelectric Pb(Zr,Ti)O3 capacitors for nonvolatile FeRAM application
    Hase, T
    Noguchi, T
    Miyasaka, Y
    NEC RESEARCH & DEVELOPMENT, 1999, 40 (02): : 210 - 213
  • [8] Mechanisms for retention loss in ferroelectric Pt/Pb(Zr0.4Ti0.6)O3/Pt capacitors
    Kang, BS
    Yoon, JG
    Kim, DJ
    Noh, TW
    Song, TK
    Lee, YK
    Lee, JK
    Park, YS
    APPLIED PHYSICS LETTERS, 2003, 82 (13) : 2124 - 2126
  • [9] Fabrication of Pb(Zr, Ti)O3 microscopic capacitors by electron beam lithography
    Hiratani, Masahiko
    Okazaki, Choichiro
    Hasegawa, Haruhiro
    Sugii, Nobuyuki
    Tarutani, Yoshinobu
    Takagi, Kazumasa
    Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes & Review Papers, 1997, 36 (08): : 5219 - 5220
  • [10] Abnormal domain switching in Pb(Zr,Ti)O3 thin film capacitors
    Wu, Aiying
    Vilarinho, Paula M.
    Wu, Dong
    Gruverman, Alexei
    APPLIED PHYSICS LETTERS, 2008, 93 (26)