LOW-ENERGY (2-5 keV) ARGON DAMAGE IN SILICON.

被引：0
|
作者：
Bangert, U. [1 ]
Goodhew, P.J. [1 ]
Jeynes, C. [1 ]
Wilson, I.H. [1 ]
机构：
[1] Univ of Surrey, Guildford, Engl, Univ of Surrey, Guildford, Engl
来源：
Journal of Physics D: Applied Physics | 1986年 / 19卷 / 04期
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摘要：
SEMICONDUCTING SILICON
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页码：589 / 603
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