DECAY RATE OF TRANSIENT PHOTOCURRENTS IN SEMICONDUCTORS.

被引：0
|
作者：
Halpern, V. [1 ]
机构：
[1] Bar-Ilan Univ, Dep of Physics,, Ramat-Gan, Isr, Bar-Ilan Univ, Dep of Physics, Ramat-Gan, Isr
来源：
Philosophical Magazine B: Physics of Condensed Matter; Electronic, Optical and Magnetic Properties | 1985年 / 52卷 / 04期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
12
引用
收藏
相关论文
共 50 条
  • [1] THE DECAY-RATE OF TRANSIENT PHOTOCURRENTS IN SEMICONDUCTORS
    HALPERN, V
    PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1985, 52 (04): : L75 - L79
  • [2] Imaging local photocurrents in organic semiconductors.
    Fichou, D
    Charra, F
    Gusev, A
    ABSTRACTS OF PAPERS OF THE AMERICAN CHEMICAL SOCIETY, 2000, 220 : U367 - U367
  • [3] THEORY OF TRANSIENT PHOTOCURRENTS IN TOTALLY DEPLETED SEMICONDUCTORS
    SEIBT, W
    SOLID-STATE ELECTRONICS, 1973, 16 (09) : 1017 - 1028
  • [4] SEMICONDUCTORS.
    BERESFORD, RODERIC
    1982, V 55 (N 21): : 119 - 125
  • [5] SEMICONDUCTORS.
    Frey, Jeffrey
    Research and Development (Barrington, Illinois), 1984, 26 (06): : 254 - 260
  • [6] TRANSIENT SPACE-CHARGE-LIMITED CURRENTS IN SEMICONDUCTORS.
    Rudenko, A.I.
    1600, (06):
  • [7] TRANSIENT RESPONSE OF ELECTRICALLY ACTIVE GRAIN BOUNDARIES IN POLYCRYSTALLINE SEMICONDUCTORS.
    Tua, Patrizio F.
    Rossinelli, Marco
    Greuter, Felix
    Physica Scripta, 1988, 38 (03) : 491 - 497
  • [8] Extension of the multiple-trapping model for transient photocurrents in amorphous semiconductors
    Abraham, M.
    Halpern, V.
    Philosophical Magazine B: Physics of Condensed Matter; Electronic, Optical and Magnetic Properties, 1989, 60 (04): : 523 - 529
  • [9] ICs AND SEMICONDUCTORS.
    Travis, Bill
    1600, (27):
  • [10] TRANSIENT PHOTOCURRENTS IN PHOTOCONDUCTIVE SEMICONDUCTORS GENERATED BY STEP-PHASE MODULATIONS
    DAVIDSON, F
    WANG, CC
    TRIVEDI, S
    OPTICS LETTERS, 1995, 20 (02) : 175 - 177
12345