TUNNELING COMPONENT IN POLYSILICON SELF-ALIGNED BIPOLAR TRANSISTORS.

被引：0

作者：

Hackbarth, E. ^{[1
]}

Li, G.P. ^{[1
]}

Chen, T.C. ^{[1
]}

机构：

[1] IBM, T. J. Watson Research Cent,, Yorktown Heights, NY, USA, IBM, T. J. Watson Research Cent, Yorktown Heights, NY, USA

来源：

IEEE Transactions on Electron Devices | 1986年 / ED-33卷 / 11期

关键词：

D O I：

暂无

中图分类号：

学科分类号：

摘要：

TRANSISTORS, BIPOLAR

引用

共 50 条

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