Long-wave edge of spectral sensitivity of high-voltage matrix photovoltaic cell with vertical p-n junctions

被引：0
|
作者：
Epifanov, M.S. [1 ]
Zhuravleva, L.L. [1 ]
Unishkov, V.A. [1 ]
机构：
[1] All-Union Scientific Research Inst, of Current Sources, Russia
来源：
Applied Solar Energy (English translation of Geliotekhnika) | 1988年 / 24卷 / 06期
关键词：
Solar Radiation--Spectrum Analysis;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
One of the advantages of matrix high-voltage photovoltaic (HPV) cells in comparison to planar PV cells is their increased sensitivity to the long-wave part of the spectrum of solar radiation. It is shown that the increase in the loss factor as a result of reflection and an increase in the width of the directional pattern leads to a shift in the long-wave edge of spectral sensitivity to the short-wave side. Theoretical dependences of the internal efficiency of absorption on the direction of radiation are compared to experimental values.
引用
收藏
页码：16 / 20
相关论文
共 50 条
  • [1] HIGH-VOLTAGE PLANAR P-N JUNCTIONS
    KAO, YC
    WOLLEY, ED
    PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1967, 55 (08): : 1409 - +
  • [2] Avalanche breakdown of high-voltage p-n junctions of SIC
    Pelaz, L
    Orantes, JL
    Vicente, J
    Bailon, L
    Barbolla, J
    MICROELECTRONICS JOURNAL, 1996, 27 (01) : 43 - 51
  • [3] DELAY OF MICROPLASMA BREAKDOWN IN HIGH-VOLTAGE P-N JUNCTIONS IN SILICON
    AKIMOV, PV
    GREKHOV, IV
    SEREZHKI.YN
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1971, 4 (11): : 1802 - +
  • [4] DETERMINATION OF POSITIONS OF MICROPLASMAS IN HIGH-VOLTAGE SILICON P-N JUNCTIONS
    GREKHOV, IV
    KLYUCHNI.VN
    SEREZHKI.YN
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1970, 3 (07): : 828 - +
  • [5] INVESTIGATION OF A HIGH-VOLTAGE PHOTOVOLTAIC CELL WITH CONTROLLABLE SPECTRAL SENSITIVITY.
    Vasil'eva, E.N.
    Vondrachek, V.K.
    Litsenko, T.A.
    Strebkov, D.S.
    Applied Solar Energy (English translation of Geliotekhnika), 1986, 22 (05): : 9 - 12
  • [6] HIGH-VOLTAGE P-N JUNCTIONS IN GAXAL1-XAS CRYSTALS
    ALFEROV, ZI
    ANDREEV, VM
    KOROLKOV, VI
    TRETYAKO.DN
    TUCHKEVI.VM
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1968, 1 (10): : 1313 - &
  • [7] HIGH VOLTAGE PLANAR P-N JUNCTIONS
    KAO, YC
    WOLLEY, ED
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1966, ED13 (11) : 816 - &
  • [8] Subnanosecond avalanche switching in high-voltage silicon diodes with abrupt and graded p-n junctions
    V. I. Brylevskii
    I. A. Smirnova
    P. B. Rodin
    I. V. Grekhov
    Technical Physics Letters, 2014, 40 : 357 - 360
  • [9] Subnanosecond avalanche switching in high-voltage silicon diodes with abrupt and graded p-n junctions
    Brylevskii, V. I.
    Smirnova, I. A.
    Rodin, P. B.
    Grekhov, I. V.
    TECHNICAL PHYSICS LETTERS, 2014, 40 (04) : 357 - 360
  • [10] Structure of recombination-induced stacking faults in high-voltage SiC p-n junctions
    Liu, JQ
    Skowronski, M
    Hallin, C
    Söderholm, R
    Lendenmann, H
    APPLIED PHYSICS LETTERS, 2002, 80 (05) : 749 - 751
12345