Reactive ion beam etching using a selective gallium doping method

被引：0

作者：

Nishioka, Kyusaku ^{[1
]}

Morimoto, Hiroaki ^{[1
]}

Mashiko, Yoji ^{[1
]}

Kato, Tadao ^{[1
]}

机构：

[1] Mitsubishi Electric Corp

来源：

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | 1989年 / 28卷 / 09期

关键词：

Gallium and Alloys - Ion Beams - Microscopic Examination--Scanning Electron Microscopy - Photoemission - Plasmas;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

A maskless process has been realized by combining reactive ion beam etching (RIBE) with focused ion beam (FIB) technology. Si patterns of 0.3 μm with no undercutting can be obtained using RIBE with electron cyclotron resonance (ECR) plasma. A Ga compound is formed as an in situ etching mask.

引用

页码：1671 / 1672

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