共 50 条
- [41] COMPUTER-SIMULATION OF CHANNELING IN STRAINED-LAYER SUPERLATTICES NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1992, 67 (1-4): : 217 - 222
- [44] Ge distribution in Gen/Sim strained-layer superlattices Japanese Journal of Applied Physics, Part 2: Letters, 1992, 31 (11 A):
- [45] Structural stability of SiGe/Si strained-layer superlattices Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors, 1996, 17 (07): : 552 - 556
- [46] ION-IMPLANTATION DOPING OF STRAINED-LAYER SUPERLATTICES NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1985, 10-1 (MAY): : 556 - 560
- [48] EFFECTS OF STRAIN AND LAYER THICKNESS ON THE GROWTH OF INXGA1-XAS-GAAS STRAINED-LAYER SUPERLATTICES JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1984, 2 (02): : 181 - 185
- [50] EXCITONS IN ZNSE-ZNS STRAINED-LAYER SUPERLATTICES PHYSICAL REVIEW B, 1989, 39 (12): : 8743 - 8746