Sputtering of statistical and regular relief surfaces under ion bombardment

被引:0
|
作者
Lozhkin, V.L.
Sotnikov, V.M.
Shkarban, I.I.
机构
来源
关键词
D O I
暂无
中图分类号
学科分类号
摘要
Surface relief influence on solids sputtering under ion bombardment has been investigated theoretically and by computer simulation. The theoretical analysis for the double prime statistical double prime relief with surface areas oriented in accordance with the normal distribution and the computer simulation for the regular relief constructed by pyramids of the repetitive size and shape allow one to find some common features of sputtering in spite of principal differences of the models used. Some of them are: non-monotonous dependence of sputtering yield S on the angle Θ1 of ion incidence, similar influence of the roughness degree on the shape of S(Θ1) dependence, weak dependence of sputtering efficiency on the roughness degree at some values of Θ1, extremal dependence of yield S on the mean inclination angle of roughness faces. The similarity of main dependences makes it possible to conclude about the possibility to simplify theoretical models for rough surface sputtering. Calculations have been accomplished for copper target under argon ion bombardment.
引用
收藏
页码:48 / 57
相关论文
共 50 条
  • [31] THE SPIKE FORMATION PROBABILITY IN SPUTTERING OF SOLIDS UNDER KEV ION-BOMBARDMENT
    BITENSKY, IS
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1993, 83 (1-2): : 110 - 116
  • [32] Molybdenum angular sputtering distribution under low energy xenon ion bombardment
    Oyarzabal, E.
    Yu, J.H.
    Doerner, R.P.
    Tynan, G.R.
    Schmid, K.
    Journal of Applied Physics, 2006, 100 (06):
  • [33] Molecular dynamics study of sputtering of Cu(111) under Ar ion bombardment
    Betz, G.
    Kirchner, R.
    Husinsky, W.
    Ruedenauer, F.
    Urbassek, H.M.
    Radiation Effects and Defects in Solids, 1994, 130-31 : 251 - 266
  • [34] Electronic sputtering process of SiO2 under heavy ion bombardment
    Imanishi, Nobutsugu
    Kyoh, Suigen
    Shimizu, Akira
    Imai, Makoto
    Itoh, Akio
    Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, 1998, 135 (1-4): : 424 - 429
  • [35] Sputtering of III-V semiconductors under argon atom and ion bombardment
    Soshnikov, IP
    Kudriavtsev, YA
    Lunev, AV
    Bert, NA
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1997, 127 : 115 - 118
  • [36] Molybdenum angular sputtering distribution under low energy xenon ion bombardment
    Oyarzabal, E.
    Yu, J. H.
    Doerner, R. P.
    Tynan, G. R.
    Schmid, K.
    JOURNAL OF APPLIED PHYSICS, 2006, 100 (06)
  • [37] THE REGULAR RELIEF FORMATION ON THE SEMICONDUCTOR SURFACES UNDER THE MILLISECOND LASER-PULSES
    KIYAK, SG
    BONCHIK, AY
    GAFIYCHUK, VV
    YUZHANIN, AG
    UKRAINSKII FIZICHESKII ZHURNAL, 1987, 32 (07): : 1079 - 1083
  • [38] ISS OBSERVATIONS OF ALUMINUM SURFACES UNDER HYDROGEN-ION BOMBARDMENT
    SAGARA, A
    KAMADA, K
    HIGASHIDA, Y
    JOURNAL OF NUCLEAR MATERIALS, 1984, 128 (DEC) : 717 - 721
  • [39] CALCULATIONS OF THE SPUTTERING ENERGY REFLECTION COEFFICIENT FOR HYDROGEN PLASMA ION-BOMBARDMENT ON CARBON SURFACES
    ORDONEZ, CA
    BOOTH, WD
    CARRERA, R
    OAKES, ME
    RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1991, 116 (1-2): : 37 - 47
  • [40] SPUTTERING OF POLYCRYSTALLINE METAL-SURFACES AT OBLIQUE ION-BOMBARDMENT IN 1 KEV RANGE
    OECHSNER, H
    ZEITSCHRIFT FUR PHYSIK, 1973, 261 (01): : 37 - 58