共 50 条
- [31] AVALANCHE-THERMAL BREAKDOWN OF P-N JUNCTIONS SOVIET PHYSICS SEMICONDUCTORS-USSR, 1968, 1 (07): : 899 - +
- [32] DEVELOPMENT OF BREAKDOWN IN PLANAR SILICON P-N JUNCTIONS SOVIET PHYSICS SEMICONDUCTORS-USSR, 1968, 2 (02): : 156 - &
- [34] MICROPLASMA-BREAKDOWN OF GERMANIUM P-N JUNCTIONS IZVESTIYA VYSSHIKH UCHEBNYKH ZAVEDENII FIZIKA, 1971, (06): : 141 - +
- [37] PHOTO-INDUCED BREAKDOWN IN P-N JUNCTIONS PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1965, 53 (09): : 1247 - &
- [38] CARRIER GENERATION AND RECOMBINATION IN P-N JUNCTIONS AND P-N JUNCTION CHARACTERISTICS PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1957, 45 (09): : 1228 - 1243
- [39] FEATURES OF THE DISSOLUTION OF SILICON UNDER CONDITIONS FOR THE ETCHING OF STRUCTURES WITH p-n JUNCTIONS. Journal of applied chemistry of the USSR, 1984, 57 (2 pt 1): : 242 - 247
- [40] Linearization of P-N junctions by the same P-N junctions 27TH EUROPEAN MICROWAVE 97, CONFERENCE + EXHIBITION - BRIDGING THE GAP BETWEEN INDUSTRY AND ACADEMIA, VOLS I AND II, 1997, : 243 - 248