ON MOS TRANSISTOR MODEL ACCURACY.

被引：0

作者：

Molin, Bengt-Arne ^{[1
]}

机构：

[1] Univ of Lund, Swed, Univ of Lund, Swed

来源：

| 1600年 / 18期

关键词：

D O I：

暂无

中图分类号：

学科分类号：

摘要：

TRANSISTORS, FIELD EFFECT

引用

共 50 条

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1600,
[42] A DC MODEL FOR AN MOS-TRANSISTOR IN THE SATURATION REGION
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[49] A MODEL FOR THE SIMULATION OF A 2 MOS-TRANSISTOR INVERTER
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[50] Seminature model of a MOS transistor for ULSI circuit simulation
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Izv VUZ Radioelektron, 1 (12-22):

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