ON MOS TRANSISTOR MODEL ACCURACY.

被引：0

作者：

Molin, Bengt-Arne ^{[1
]}

机构：

[1] Univ of Lund, Swed, Univ of Lund, Swed

来源：

| 1600年 / 18期

关键词：

D O I：

暂无

中图分类号：

学科分类号：

摘要：

TRANSISTORS, FIELD EFFECT

引用

共 50 条

[1] Practical aspects of MOS transistor model "accuracy" in modern CMOS technology
Bendix, P
Foty, D
Pachura, D
ICECS 2004: 11th IEEE International Conference on Electronics, Circuits and Systems, 2004, : 642 - 645
[2] SPOT ON ACCURACY.
Blackshaw, Martin
Metalworking Production, 1984, 128 (02) : 88 - 89
[3] A new model for recognition response times and accuracy.
Diller, D
Shiffrin, R
Nobel, P
JOURNAL OF MATHEMATICAL PSYCHOLOGY, 1998, 42 (04) : 475 - 475
[4] QUESTION OF ACCURACY.
Dunwoody, Sharon
IEEE Transactions on Professional Communications, 1982, PC-25 (04): : 196 - 199
[5] Empathic accuracy.
Kenny, DA
JOURNAL OF NERVOUS AND MENTAL DISEASE, 1999, 187 (04) : 257 - 258
[6] Empathic accuracy.
不详
PERCEPTUAL AND MOTOR SKILLS, 1998, 86 (02) : 735 - 735
[7] ROBOT ACCURACY.
Stauffer, Robert N.
Robotics today, 1985, 7 (02): : 43 - 49
[8] Computer and Accuracy.
Rump, S.M.
Elektronische Rechenanlagen mit Computer Praxis, 1982, 24 (06): : 268 - 277
[9] Empathic accuracy.
Batson, CD
JOURNAL OF SOCIAL AND CLINICAL PSYCHOLOGY, 1998, 17 (01) : 124 - 126
[10] Cryogenic MOS Transistor Model
Beckers, Arnout
Jazaeri, Farzan
Enz, Christian
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2018, 65 (09) : 3617 - 3625