INSTABILITY OF PHOTOEXCITED ELECTRON-HOLE PLASMA IN SHORT SEMICONDUCTOR STRUCTURES.

被引：0

作者：

Junevicius, D. ^{[1
]}

Reklaitis, A. ^{[1
]}

机构：

[1] Lithuanian Acad of Sciences, Vilnius, USSR, Lithuanian Acad of Sciences, Vilnius, USSR

来源：

Applied Physics A: Solids and Surfaces | 1987年 / A42卷 / 01期

关键词：

ELECTRIC FIELD EFFECTS - SEMICONDUCTING GALLIUM ARSENIDE;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

The instability of the electron-hole plasma produced by continuous photoexcitation in short semiconductor structures is investigated theoretically. The applied electric field is considerably disturbed by photogenerated charge carriers. At a sufficiently intensive photogeneration plasma instability occurs. The frequency of current oscillations due to the instability, as shown by numerical simulation for a GaAs structure, is in the range of 10**1**1 minus 10**1**2 S** minus **1.

引用

页码：41 / 43

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