INSTABILITY OF PHOTOEXCITED ELECTRON-HOLE PLASMA IN SHORT SEMICONDUCTOR STRUCTURES.

被引：0
|
作者：
Junevicius, D. [1 ]
Reklaitis, A. [1 ]
机构：
[1] Lithuanian Acad of Sciences, Vilnius, USSR, Lithuanian Acad of Sciences, Vilnius, USSR
来源：
Applied Physics A: Solids and Surfaces | 1987年 / A42卷 / 01期
关键词：
ELECTRIC FIELD EFFECTS - SEMICONDUCTING GALLIUM ARSENIDE;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
The instability of the electron-hole plasma produced by continuous photoexcitation in short semiconductor structures is investigated theoretically. The applied electric field is considerably disturbed by photogenerated charge carriers. At a sufficiently intensive photogeneration plasma instability occurs. The frequency of current oscillations due to the instability, as shown by numerical simulation for a GaAs structure, is in the range of 10**1**1 minus 10**1**2 S** minus **1.
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页码：41 / 43
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