Investigations of vacancy defects in CdTe by means of positron annihilation

被引：0
|
作者：
Polity, A. [1 ]
Abgarjan, Th. [1 ]
Krause-Rehberg, R. [1 ]
机构：
[1] Martin-Luther-Universitaet, Halle-Wittenberg, Halle, Germany
来源：
Materials Science Forum | 1995年 / 175-178卷 / pt 1期
关键词：
712.1.2 Compound Semiconducting Materials - 741.1 Light/Optics - 804 Chemical Products Generally - 931.2 Physical Properties of Gases; Liquids and Solids - 931.3 Atomic and Molecular Physics - 933.1.1 Crystal Lattice;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
6
引用
收藏
页码：473 / 476
相关论文
共 50 条
  • [21] Atomic defects in AlPdMn:: A study by means of positron annihilation spectroscopy
    Baier, F
    Müller, MA
    Sprengel, W
    Grushko, B
    Sterzel, R
    Assmus, W
    Schaefer, HE
    POSITRON ANNIHILATION - ICPA-12, 2001, 363-3 : 179 - 181
  • [22] Investigation of Nitrogen and Vacancy Defects in Synthetic Diamond Plates by Positron Annihilation Spectroscopy
    Eseev, Marat
    Kuziv, Ivan
    Kostin, Aleksey
    Meshkov, Igor
    Sidorin, Aleksey
    Orlov, Oleg
    MATERIALS, 2023, 16 (01)
  • [23] Positron Annihilation Study of Vacancy Type Defects in Ti, Si, and BaSrFBr:Eu
    Lee, Chong Yong
    APPLIED SCIENCE AND CONVERGENCE TECHNOLOGY, 2016, 25 (05): : 85 - 87
  • [24] Identification of vacancy-type defects in ZnTe using positron annihilation spectroscopy
    Hamid, AS
    Shaban, H
    Mansour, BA
    Uedono, A
    PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2005, 202 (10): : 1914 - 1918
  • [25] Positron Annihilation Spectroscopy of Vacancy Type Defects in Submicrocrystalline Copper under Annealing
    Kuznetsov, Pavel V.
    Lider, Andrey M.
    Bordulev, Yuriy S.
    Laptev, Roman S.
    Mironov, Yuriy P.
    Rakhmatulina, Tanzilya V.
    Korznikov, Alexandr V.
    ADVANCED MATERIALS WITH HIERARCHICAL STRUCTURE FOR NEW TECHNOLOGIES AND RELIABLE STRUCTURES 2016, 2016, 1783
  • [26] Evaluation of vacancy-type defects in ZnO by the positron annihilation lifetime spectroscopy
    Ono, R.
    Togimitsu, T.
    Sato, W.
    JOURNAL OF RADIOANALYTICAL AND NUCLEAR CHEMISTRY, 2015, 303 (02) : 1223 - 1226
  • [27] Evaluation of vacancy-type defects in ZnO by the positron annihilation lifetime spectroscopy
    R. Ono
    T. Togimitsu
    W. Sato
    Journal of Radioanalytical and Nuclear Chemistry, 2015, 303 : 1223 - 1226
  • [28] Spatial distribution of vacancy defects in GaAs:Te wafers studied by positron annihilation
    Cavallini, A.
    Dupasquier, A.
    Ferro, G.
    Piqueras, J.
    Valli, M.
    Materials Science Forum, 1997, 255-257 : 614 - 616
  • [29] Spatial distribution of vacancy defects in GaAs:Te wafers studied by positron annihilation
    Cavallini, A
    Dupasquier, A
    Ferro, G
    Piqueras, J
    Valli, M
    POSITRON ANNIHILATION: ICPA-11 - PROCEEDINGS OF THE 11TH INTERNATIONAL CONFERENCE ON POSITRON ANNIHILATION, KANSAS CITY, MISSOURI, USA, MAY 1997, 1997, 255-2 : 614 - 616
  • [30] VACANCY-IMPURITY BINDING ENTHALPY IN NISB BY MEANS OF POSITRON-ANNIHILATION
    DLUBEK, G
    BRUMMER, O
    MEYENDORF, N
    PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1979, 53 (02): : K157 - K160
12345