Intraband relaxation time in compressive-strained quantum-well lasers

被引:0
|
作者
机构
[1] Park, Seoung Hwan
[2] Asada, Masahiro
[3] Kudo, Koji
[4] Arai, Shigehisa
来源
Park, Seoung Hwan | 1600年 / 31期
关键词
Semiconductor lasers;
D O I
暂无
中图分类号
学科分类号
摘要
引用
下载
收藏
相关论文
共 50 条
  • [21] Intraband relaxation time in zinc-blends GaN/AlGaN quantum-well structures
    Park, SH
    Lee, YT
    JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 1999, 35 (06) : 512 - 515
  • [22] STRAINED-LAYER QUANTUM-WELL HETEROSTRUCTURE LASERS
    COLEMAN, JJ
    THIN SOLID FILMS, 1992, 216 (01) : 68 - 71
  • [23] LINEWIDTH ENHANCEMENT FACTOR IN STRAINED QUANTUM-WELL LASERS
    DUTTA, NK
    WYNN, J
    SIVCO, DL
    CHO, AY
    APPLIED PHYSICS LETTERS, 1990, 56 (23) : 2293 - 2294
  • [24] Modeling of strained quantum-well lasers and comparison with experiments
    Chuang, SL
    Chang, CS
    Minch, J
    Fang, W
    COMPOUND SEMICONDUCTORS 1995, 1996, 145 : 1241 - 1246
  • [26] Many-body optical gain and intraband relaxation time of wurtzite InGaN/GaN quantum-well lasers and comparison with experiment
    Park, SH
    Ahn, D
    Park, EH
    Yoo, TK
    Lee, YT
    APPLIED PHYSICS LETTERS, 2005, 87 (04)
  • [27] IMPROVED PERFORMANCE OF COMPRESSIVELY AS WELL AS TENSILE STRAINED QUANTUM-WELL LASERS
    KRIJN, MPCM
    THOOFT, GW
    BOERMANS, MJB
    THIJS, PJA
    VANDONGEN, T
    BINSMA, JJM
    TIEMEIJER, LF
    VANDERPOEL, CJ
    APPLIED PHYSICS LETTERS, 1992, 61 (15) : 1772 - 1774
  • [28] Intraband relaxation time in wurtzite GaN/AlGaN quantum-well structures with spontaneous polarization effects
    Park, S.-H.
    Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 2001, 40 (07): : 4570 - 4574
  • [29] Modelling and optical response of a compressive-strained AlGaN/GaN quantum well laser diode
    A.Menani
    L.Dehimi
    S.Dehimi
    F.Pezzimenti
    Journal of Semiconductors, 2020, 41 (06) : 33 - 38
  • [30] Modelling and optical response of a compressive-strained AlGaN/GaN quantum well laser diode
    Menani, A.
    Dehimi, L.
    Dehimi, S.
    Pezzimenti, F.
    JOURNAL OF SEMICONDUCTORS, 2020, 41 (06)