Segregation and interdiffusion of in atoms in GaAs/InAs/GaAs heterostructures

被引:0
|
作者
机构
来源
| 1770年 / 74期
关键词
D O I
暂无
中图分类号
学科分类号
摘要
引用
收藏
相关论文
共 50 条
  • [41] Interdiffusion in GaAs/GaAsP and GaAs/GaAsSb superlattices
    Schultz, M
    Egger, U
    Scholz, R
    Breitenstein, O
    Werner, P
    Gosele, U
    Franzheld, R
    Uematsu, M
    Ito, H
    DEFECT AND DIFFUSION FORUM/JOURNAL, 1997, 143 : 1101 - 1107
  • [42] Temperature-dependent modulated reflectance and photoluminescence of InAs-GaAs and InAs-InGaAs-GaAs quantum dot heterostructures
    Rimkus, Andrius
    Pozingyte, Evelina
    Nedzinskas, Ramunas
    Cechavicius, Bronislovas
    Kavaliauskas, Julius
    Valusis, Gintaras
    Li, Lianhe
    Linfield, Edmund H.
    OPTICAL AND QUANTUM ELECTRONICS, 2016, 48 (03) : 1 - 6
  • [43] INTERDIFFUSION OF GAAS AND ALAS
    CHANG, LL
    KOMA, A
    BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1975, 20 (03): : 443 - 443
  • [44] Discrepancy between photoluminescence and photoresponse intensities in n-InAs/GaAs and InAs/n-GaAs quantum-dot heterostructures
    Lee, SJ
    Noh, SK
    Lee, KS
    Choe, JW
    SOLID STATE COMMUNICATIONS, 2004, 132 (02) : 115 - 118
  • [45] Self- and interdiffusion in AlxGa1-xAs/GaAs isotope heterostructures
    Bracht, H
    Haller, EE
    Eberl, K
    Cardona, M
    APPLIED PHYSICS LETTERS, 1999, 74 (01) : 49 - 51
  • [46] IMPURITY DIFFUSION AND LAYER INTERDIFFUSION IN ALXGA1-XAS-GAAS HETEROSTRUCTURES
    DEPPE, DG
    HOLONYAK, N
    PLANO, WE
    ROBBINS, VM
    DALLESASSE, JM
    HSIEH, KC
    BAKER, JE
    JOURNAL OF APPLIED PHYSICS, 1988, 64 (04) : 1838 - 1844
  • [47] Comparison of the thermal interdiffusion phenomena in InGaAs/GaAs and InGaAs/AlGaAs strained heterostructures
    Vasilkova, E., I
    Klochkov, A. N.
    Vinichenko, A. N.
    Kargin, N., I
    Vasil'evskii, I. S.
    SURFACES AND INTERFACES, 2022, 29
  • [48] DIFFERENTIAL AL-GA INTERDIFFUSION IN ALGAAS/GAAS AND ALGAINP/GAINP HETEROSTRUCTURES
    BEERNINK, KJ
    SUN, D
    TREAT, DW
    BOUR, BP
    APPLIED PHYSICS LETTERS, 1995, 66 (26) : 3597 - 3599
  • [49] Characterization of GaAs/Si/GaAs heterostructures
    Sudersena Rao, T.
    Horikoshi, Yoshiji
    Jagadish, C.
    Elliman, R.G.
    Williams, J.S.
    Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 1992, 31 (10): : 3282 - 3286
  • [50] CHARACTERIZATION OF GAAS/SI/GAAS HETEROSTRUCTURES
    RAO, TS
    HORIKOSHI, Y
    JAGADISH, C
    ELLIMAN, RG
    WILLIAMS, JS
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1992, 31 (10): : 3282 - 3286