Accurate modeling of GaAs MMIC devices

被引：0
|
作者：
Chen, X.J. [1 ]
Xu, S.H. [1 ]
Cen, Y.F. [1 ]
Li, H. [1 ]
Song, J. [1 ]
Chen, X.J. [1 ]
机构：
[1] Nanjing Electron. Devices Inst., Nanjing 210016, China
来源：
Guti Dianzixue Yanjiu Yu Jinzhan/Research & Progress of Solid State Electronics | 2001年 / 21卷 / 02期
关键词：
Computer simulation - Field effect transistors - Mathematical models - Semiconducting gallium arsenide;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
We emphasized the essentiality of accurate model to GaAs MMIC's research and product development, and discussed the concept of engineering model and the method of extracting model. Some model extracting and model verifying examples in Nanjing Electronic Devices Institute are also presented.
引用
收藏
页码：126 / 132
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