Electronic stopping cross sections in silicon carbide for low-velocity ions with 1&leZ1&le15

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机构：
[1] [1,Janson, M.S.
[2] Linnarsson, M.K.
[3] Hallén, A.
[4] 1,Svensson, B.G.
来源：
Janson, M.S. (mjanson@physnet.uni-hamburg.de) | 1600年 / American Institute of Physics Inc.卷 / 96期
关键词：
Amorphization - Approximation theory - Carbon - Computational methods - Data reduction - Electrons - Heavy ions - Ion beams - Ion implantation - Monte Carlo methods - Parameter estimation - Swelling;
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摘要：
The mean projected range Rp of 133 implantations of 1H, 2H, 7Li, 11B, 14N, 16O, 27Al and 31P into SiC at energies ranging from 0.2 KeV to 4 MeV was investigated. The low-velocity electronic stopping cross sections for ions with atomic numbers 1&leZ1&le15 in silicon carbine was also investigated. The influence of the nuclear stopping expression on the extracted Se was evaluated. It was observed that the implantations were performed normal to the sample surface, making the implantation directions determined by the off axis cut of the SiC substrates.
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