Electronic stopping cross sections in silicon carbide for low-velocity ions with 1&leZ1&le15

被引：0
|
作者：
机构：
[1] [1,Janson, M.S.
[2] Linnarsson, M.K.
[3] Hallén, A.
[4] 1,Svensson, B.G.
来源：
Janson, M.S. (mjanson@physnet.uni-hamburg.de) | 1600年 / American Institute of Physics Inc.卷 / 96期
关键词：
Amorphization - Approximation theory - Carbon - Computational methods - Data reduction - Electrons - Heavy ions - Ion beams - Ion implantation - Monte Carlo methods - Parameter estimation - Swelling;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
The mean projected range Rp of 133 implantations of 1H, 2H, 7Li, 11B, 14N, 16O, 27Al and 31P into SiC at energies ranging from 0.2 KeV to 4 MeV was investigated. The low-velocity electronic stopping cross sections for ions with atomic numbers 1&leZ1&le15 in silicon carbine was also investigated. The influence of the nuclear stopping expression on the extracted Se was evaluated. It was observed that the implantations were performed normal to the sample surface, making the implantation directions determined by the off axis cut of the SiC substrates.
引用
收藏
相关论文
共 27 条
  • [1] Electronic stopping cross sections in silicon carbide for low-velocity ions with 1≤Z1≤15
    Janson, MS
    Linnarsson, MK
    Hallén, A
    Svensson, BG
    JOURNAL OF APPLIED PHYSICS, 2004, 96 (01) : 164 - 169
  • [2] ELECTRONIC STOPPING OF IONS IN THE LOW-VELOCITY LIMIT
    DUFTY, JW
    BERKOVSKY, M
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1995, 96 (3-4): : 626 - 632
  • [3] VELOCITY DEPENDENCE IN LOW-VELOCITY ELECTRONIC STOPPING POWER OF HEAVY-IONS
    KEINONEN, J
    KURONEN, A
    HAUTALA, M
    KARTTUNEN, V
    LAPPALAINEN, R
    UHRMACHER, M
    PHYSICS LETTERS A, 1987, 123 (06) : 307 - 310
  • [4] Modified El-Hoshy-Gibbons model for electronic stopping cross sections in Si and SiC for low-velocity ions with atomic numbers between 5 and 15
    Mochizuki, Kazuhiro
    Nishimura, Tomoaki
    Mishima, Tomoyoshi
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2024, 63 (05)
  • [5] Z1-OSCILLATIONS IN THE STOPPING POWERS OF SILICON AND TUNGSTEN FOR LOW-VELOCITY CHANNELED HEAVY-IONS
    KUMAR, VH
    PATHAK, AP
    JOURNAL OF PHYSICS-CONDENSED MATTER, 1993, 5 (19) : 3163 - 3168
  • [6] INDIVIDUAL ORBITAL CONTRIBUTION TO ELECTRONIC STOPPING CROSS-SECTION IN LOW-VELOCITY REGION
    CRUZ, SA
    CISNEROS, C
    ALVAREZ, I
    PHYSICAL REVIEW A, 1978, 18 (05): : 2369 - 2372
  • [7] INDIVIDUAL ORBITAL CONTRIBUTION TO ELECTRONIC STOPPING CROSS-SECTION IN LOW-VELOCITY REGION
    CRUZ, SA
    CISNEROS, C
    ALVAREZ, I
    PHYSICAL REVIEW A, 1978, 17 (01): : 132 - 140
  • [8] COMPARISON OF THEORETICAL-MODELS FOR ELECTRONIC STOPPING POWER OF LOW-VELOCITY HEAVY-IONS
    LAND, DJ
    BRENNAN, JG
    SIMONS, DG
    BROWN, MD
    PHYSICAL REVIEW A, 1977, 16 (02): : 492 - 499
  • [9] SCATTERING CROSS SECTIONS AND INTERACTION ENERGIES OF LOW-VELOCITY HE+ IONS IN HELIUM
    MASON, EA
    VANDERSLICE, JT
    PHYSICAL REVIEW, 1957, 108 (02): : 293 - 294
  • [10] Z2 DEPENDENCE OF ELECTRONIC STOPPING POWER OF LOW-VELOCITY CHANNELED HEAVY-IONS
    PATHAK, AP
    JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1974, 7 (18): : 3239 - 3244
123