NATURE OF NEGATIVE MAGNETORESISTANCE OF GALLIUM ARSENIDE.

Investigation was made of n-type GaAs crystals doped with various impurities: S, Se, Sn, Si, Cu, Ni, Cr. The investigation was carried out in a wide range of temperatures (T equals 2-300 degree K) andelectron densities (n equals 10**1**5-10**1**8 cm** minus **3). An analysis of the experimental results indicated that the negative magnetoresistance was independent of the nature of the dopant but was governed solely by the concentration of shallow donor levels. The experimental results were in good agreement with the Toyozawa model (1962). In the investigated range of electron densities the negative magnetoresistance was due to the scattering by localized spins of impurity atoms.