Transparent thin film transistors using ZnO as an active channel layer and their electrical properties

被引：0

作者：

机构：

[1] Masuda, Satoshi

[2] Kitamura, Ken

[3] Okumura, Yoshihiro

[4] Miyatake, Shigehiro

[5] Tabata, Hitoshi

[6] Kawai, Tomoji

来源：

Masuda, S. (masuda@optec.minolta.co.jp) | 1624年 / American Institute of Physics Inc.卷 / 93期

关键词：

Carrier concentration - Fabrication - Gates (transistor) - Glass - Leakage currents - Opacity - Pulsed laser deposition - Silica - Silicon nitride - Silicon wafers - Transparency - X ray diffraction analysis - Zinc oxide;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

The construction and characteristics of bottom-gate-type thin film transistors (TFT) which used ZnO as the active channel layer with a two-layer gate insulator were described. The subsequent reduction in the drain current and the leakage current characteristics was discussed. The electrical properties of a transparent TFT were also presented.

引用

共 50 条

[1] Transparent thin film transistors using ZnO as an active channel layer and their electrical properties
Masuda, S
Kitamura, K
Okumura, Y
Miyatake, S
Tabata, H
Kawai, T
JOURNAL OF APPLIED PHYSICS, 2003, 93 (03) : 1624 - 1630
[2] The fabrication of thin film transistors with ZnO as active channel layer
Zhang, Xin-An
Zhang, Jing-Wen
Zhang, Wei-Feng
Wang, Dong
Bi, Zhen
Zhang, Jie
Hou, Xun
Gongneng Cailiao/Journal of Functional Materials, 2008, 39 (07): : 1144 - 1146
[3] Effects of oxygen contents in the active channel layer on electrical characteristics of ZnO-based thin film transistors
Moon, Yeon-Keon
Moon, Dae-Yong
Lee, Sih
Lee, Sang-Ho
Park, Jong-Wan
Jeong, Chang-Oh
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2008, 26 (04): : 1472 - 1476
[4] Enhanced electrical properties of dual-layer channel ZnO thin film transistors prepared by atomic layer deposition
Li, Huijin
Han, Dedong
Dong, Junchen
Yu, Wen
Liang, Yi
Luo, Zhen
Zhang, Shengdong
Zhang, Xing
Wang, Yi
APPLIED SURFACE SCIENCE, 2018, 439 : 632 - 637
[5] Electrical Properties of Thin Film Transistors with Zinc Tin Oxide Channel Layer
Hong, Seunghwan
Oh, Gyujin
Kim, Eun Kyu
JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2017, 71 (08) : 500 - 505
[6] Electrical properties of thin film transistors with zinc tin oxide channel layer
Seunghwan Hong
Gyujin Oh
Eun Kyu Kim
Journal of the Korean Physical Society, 2017, 71 : 500 - 505
[7] Investigation of Al-Doped ZnO Channel Layer in ZnO-Based Transparent Thin-Film Transistors
Lee, Hsin-Ying
Shien, Wen-Ming
JAPANESE JOURNAL OF APPLIED PHYSICS, 2012, 51 (02)
[8] Investigation of Al-doped ZnO channel layer in ZnO-based transparent thin-film transistors
Department of Photonics, National Cheng Kung University, Tainan 701, Taiwan
不详
Lee, H.-Y. (hylee@ee.ncku.edu.tw), 2012, Japan Society of Applied Physics (51)
[9] Electrical Properties of Solution Processed In-Ga-ZnO Thin Film Transistors with Multi-Stacked Active Layer
Kim, Soon Kon
Choi, Pyung Ho
Kim, Sang Sub
Kim, Hyun Woo
Lee, Na Young
Choi, Byoung Deog
JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, 2015, 15 (10) : 7508 - 7512
[10] Influence of the active layer thickness on the electrical properties of ZnO thin film transistors fabricated by radio frequency magnetron sputtering
Huang, Hai-Qin
Liu, Feng-Juan
Sun, Jian
Zhao, Jian-Wei
Hu, Zuo-Fu
Li, Zhen-Jun
Zhang, Xi-Qing
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 2011, 72 (12) : 1393 - 1396

← 1 2 3 4 5 →