Influence of the active layer thickness on the electrical properties of ZnO thin film transistors fabricated by radio frequency magnetron sputtering

被引：22

作者：

Huang, Hai-Qin ^{[1
]}

Liu, Feng-Juan ^{[1
]}

Sun, Jian ^{[1
]}

Zhao, Jian-Wei ^{[1
]}

Hu, Zuo-Fu ^{[1
]}

Li, Zhen-Jun ^{[1
]}

Zhang, Xi-Qing ^{[1
]}

机构：

[1] Beijing Jiaotong Univ, Inst Optoelect Technol, Minist Educ, Key Lab Luminescence & Opt Informat, Beijing 100044, Peoples R China

来源：

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS | 2011年 / 72卷 / 12期

基金：

中国国家自然科学基金;

关键词：

Inorganic compounds; Oxides; Electrical properties; LOW-TEMPERATURE;

D O I：

10.1016/j.jpcs.2011.07.005

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

We report on the electrical properties of bottom-gate ZnO thin film transistors (TFTs) with different active layer thicknesses. The ZnO active layer films with thickness varied from 20 to 100 nm were deposited by radio frequency (rf) magnetron sputtering on SiO2/p-Si substrate and annealed at a high temperature of 950 degrees C. The transistor with 40 nm thick ZnO exhibited the best performance, with a field effect mobility of 27.5 cm(2)/V s, a threshold voltage of -2.4 V and an on/off ratio of 7 x 10(3). (C) 2011 Elsevier Ltd. All rights reserved.

引用

页码：1393 / 1396

页数：4

共 50 条

[1] Electrical properties of ZnO-based bottom-gate thin film transistors fabricated by using radio frequency magnetron sputtering
Navamathavan, R.
Choi, Chi Kyu
Park, Seong-Ju
JOURNAL OF ALLOYS AND COMPOUNDS, 2009, 475 (1-2) : 889 - 892
[2] Thin-film transistors based on ZnO fabricated by using radio-frequency magnetron sputtering
Navamathavan, R
Lim, JH
Hwang, DK
Kim, BH
Oh, JY
Yang, JH
Kim, HS
Park, SJ
Jang, JH
JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2006, 48 (02) : 271 - 274
[3] Influence of ZnO buffer layer on AZO film properties by radio frequency magnetron sputtering
Hsu, C. Y.
Ko, T. F.
Huang, Y. M.
JOURNAL OF THE EUROPEAN CERAMIC SOCIETY, 2008, 28 (16) : 3065 - 3070
[4] Effects of ZnO buffer layer thickness on properties of ZnO thin films deposited by radio-frequency magnetron sputtering
Bang, KH
Hwang, DH
Myoung, JM
APPLIED SURFACE SCIENCE, 2003, 207 (1-4) : 359 - 364
[5] Fabrication and characterizations of ZnO thin film transistors prepared by using radio frequency magnetron sputtering
Navamathavan, R.
Choi, Chi Kyu
Yang, Eun-Jeong
Lim, Jae-Hong
Hwang, Dae-Kue
Park, Seong-Ju
SOLID-STATE ELECTRONICS, 2008, 52 (05) : 813 - 816
[6] Simulation, Fabrication and Characterization of ZnO Based Thin Film Transistors Grown by Radio Frequency Magnetron Sputtering
Singh, Shaivalini
Chakrabarti, P.
JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, 2012, 12 (03) : 1880 - 1885
[7] ZnO thin film synthesis by reactive radio frequency magnetron sputtering
Senay, Volkan
Pat, Suat
Korkmaz, Sadan
Aydogmus, Tuna
Elmas, Saliha
Ozen, Soner
Ekem, Naci
Balbag, M. Zafer
APPLIED SURFACE SCIENCE, 2014, 318 : 2 - 5
[8] Fabrication and Electrical Characterization of InZnO:N Thin Film Transistors Prepared by Radio Frequency Magnetron Sputtering
Peng, Yunfei
Wang, Hailong
Zhang, Wenqi
Li, Bin
Zhou, Dongzhan
Zhang, Xiqing
Wang, Yongsheng
JOURNAL OF ELECTRONIC MATERIALS, 2016, 45 (07) : 3340 - 3342
[9] Fabrication and Electrical Characterization of InZnO:N Thin Film Transistors Prepared by Radio Frequency Magnetron Sputtering
Yunfei Peng
Hailong Wang
Wenqi Zhang
Bin Li
Dongzhan Zhou
Xiqing Zhang
Yongsheng Wang
Journal of Electronic Materials, 2016, 45 : 3340 - 3342
[10] Thin film transistors based on TiO2 fabricated by using radio-frequency magnetron sputtering
Shih, W. S.
Young, S. J.
Ji, L. W.
Water, W.
Meen, T. H.
Lam, K. T.
Sheen, J.
Chu, W. C.
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 2010, 71 (12) : 1760 - 1762

← 1 2 3 4 5 →