Technology of partially depleted CMOS/SOI

被引：0
|
作者：
Liu, Xin-Yu [1 ]
Sun, Hai-Feng [1 ]
Chen, Huan-Zhang [1 ]
Hu, Huan-Zhang [1 ]
Hai, Chao-He [1 ]
Liu, Zhong-Li [1 ]
He, Zhi-Jing [1 ]
Wu, De-Xin [1 ]
机构：
[1] Microelectron. Res. and Devmt. Cent., Chinese Acad. of Sci., Beijing 100029, China
来源：
Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors | 2001年 / 22卷 / 06期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
CMOS integrated circuits
引用
收藏
页码：806 / 810
相关论文
共 50 条
  • [31] Fully depleted SOI (FDSOI) technology
    Kangguo Cheng
    Ali Khakifirooz
    Science China Information Sciences, 2016, 59
  • [32] Fully depleted SOI (FDSOI) technology
    Cheng, Kangguo
    Khakifirooz, Ali
    SCIENCE CHINA-INFORMATION SCIENCES, 2016, 59 (06)
  • [33] Fully depleted SOI (FDSOI) technology
    Kangguo CHENG
    Ali KHAKIFIROOZ
    ScienceChina(InformationSciences), 2016, 59 (06) : 20 - 34
  • [34] Measurement of generation lifetime in partially depleted SOI MOSFETs
    Shin, HC
    Racanelli, M
    Huang, WM
    Ford, J
    Foerstner, J
    Shin, H
    Wetteroth, T
    Hong, SQ
    Wilson, SR
    Schroder, DK
    Cheng, S
    PROCEEDINGS OF THE SEVENTH INTERNATIONAL SYMPOSIUM ON SILICON-ON-INSULATOR TECHNOLOGY AND DEVICES, 1996, 96 (03): : 263 - 270
  • [35] Noise analysis methodology for partially depleted SOI circuits
    Nanua, M
    Blaauw, D
    IEEE JOURNAL OF SOLID-STATE CIRCUITS, 2004, 39 (09) : 1581 - 1585
  • [36] Low frequency noise in 0. 12 μm partially and fully depleted SOI technology
    Dieudonné, F
    Haendler, S
    Jomaah, J
    Balestra, F
    MICROELECTRONICS RELIABILITY, 2003, 43 (02) : 243 - 248
  • [37] Single pulse output of partially depleted SOI FETS
    Jenkins, KA
    Taur, Y
    Sun, JYC
    1996 IEEE INTERNATIONAL SOI CONFERENCE PROCEEDINGS, 1996, : 72 - 73
  • [38] Investigation of nonstationary transport and quantum effects in realistic deep submicrometerr partially depleted SOI technology
    Munteanu, D
    Le Carval, G
    Fenouillet-Béranger, C
    Faynot, O
    ELECTROCHEMICAL AND SOLID STATE LETTERS, 2002, 5 (05) : G29 - G31
  • [39] Dynamic threshold voltage MOS in partially depleted SOI technology: a wide frequency band analysis
    Dehan, M
    Raskin, JP
    SOLID-STATE ELECTRONICS, 2005, 49 (01) : 67 - 72
  • [40] Noise analysis methodology for partially depleted SOI circuits
    Nanua, M
    Blaauw, D
    PROCEEDINGS OF THE IEEE 2003 CUSTOM INTEGRATED CIRCUITS CONFERENCE, 2003, : 719 - 722
12345