Transmission electron microscopy study on defect reduction in GaAs on Si heteroepitaxial layers grown by metalorganic vapor phase epitaxy

被引：0
|
作者：
Max-Planck Inst fur Metallforschung, Inst fur Physik, Stuttgart, Germany [1 ]
机构：
来源：
J Cryst Growth | / 1-2卷 / 28-36期
关键词：
Annealing - Crystal defects - Dislocations (crystals) - Semiconducting aluminum compounds - Semiconducting gallium arsenide - Semiconducting silicon - Thermal cycling - Transmission electron microscopy;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
相关论文
共 50 条
  • [1] Transmission electron microscopy study on defect reduction in GaAs on Si heteroepitaxial layers grown by metalorganic vapor phase epitaxy
    JinPhillipp, NY
    Phillipp, F
    Marschner, T
    Stolz, W
    Gobel, EO
    JOURNAL OF CRYSTAL GROWTH, 1996, 158 (1-2) : 28 - 36
  • [2] Scanning transmission electron microscopy investigation of the Si(111)/AlN interface grown by metalorganic vapor phase epitaxy
    Radtke, G.
    Couillard, M.
    Botton, G. A.
    Zhu, D.
    Humphreys, C. J.
    APPLIED PHYSICS LETTERS, 2010, 97 (25)
  • [3] Heteroepitaxial InP layers grown by metalorganic chemical vapor deposition on novel GaAs on Si buffers obtained by molecular beam epitaxy
    Olego, D.J.
    Tamura, M.
    Okuno, Y.
    Kawano, T.
    Hashimoto, A.
    1600, (71):
  • [4] REDUCTION OF AUTODOPED GALLIUM CONCENTRATION IN HGCDTE LAYERS ON GAAS GROWN BY METALORGANIC VAPOR-PHASE EPITAXY
    NISHINO, H
    MURAKAMI, S
    EBE, H
    NISHIJIMA, Y
    JOURNAL OF CRYSTAL GROWTH, 1995, 146 (1-4) : 619 - 623
  • [5] Incorporation modes of silicon in GaAs:Si grown by metalorganic vapor phase epitaxy
    Beji, L.
    Rebey, A.
    El Jani, B.
    EPJ Applied Physics, 1998, 4 (03): : 269 - 273
  • [6] Incorporation modes of silicon in GaAs: Si grown by metalorganic vapor phase epitaxy
    Beji, L
    Rebey, A
    El Jani, B
    EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS, 1998, 4 (03): : 269 - 273
  • [7] HETEROEPITAXIAL GROWTH OF INP ON GAAS BY METALORGANIC VAPOR-PHASE EPITAXY
    PAK, K
    WAKAHARA, A
    SATO, T
    TAKAGI, Y
    YOSHIDA, A
    YONEZU, H
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1987, 134 (09) : C576 - C576
  • [8] Morphology and defect structures of GaSb islands on GaAs grown by metalorganic vapor phase epitaxy
    Joon-Hyung Kim
    Tae-Yeon Seong
    N. J. Mason
    P. J. Walker
    Journal of Electronic Materials, 1998, 27 : 466 - 471
  • [9] Defect states in cubic GaN epilayer grown on GaAs by metalorganic vapor phase epitaxy
    Xu, SJ
    Or, CT
    Li, Q
    Zheng, LX
    Xie, MH
    Tong, SY
    Yang, H
    PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 2001, 188 (02): : 681 - 685
  • [10] Transmission electron microscopy study of the InP/InGaAs and InGaAs/InP heterointerfaces grown by metalorganic vapor-phase epitaxy
    Decobert, J
    Patriarche, G
    JOURNAL OF APPLIED PHYSICS, 2002, 92 (10) : 5749 - 5755
12345