Generation-recombination noise in gallium nitride-based quantum well structures

被引:0
|
作者
机构
[1] Duran, Rolando S.
[2] Larkins Jr., Graver L.
[3] Van Vliet, Carolyne M.
[4] Morkoç, Hadis
来源
Van Vliet, C.M. (vanvliet@physics.miami.edu) | 1600年 / American Institute of Physics Inc.卷 / 93期
关键词
D O I
暂无
中图分类号
学科分类号
摘要
引用
收藏
相关论文
共 50 条
  • [1] Generation-recombination noise in gallium nitride-based quantum well structures
    Duran, RS
    Larkins, GL
    Van Vliet, CM
    Morkoç, H
    JOURNAL OF APPLIED PHYSICS, 2003, 93 (09) : 5337 - 5345
  • [2] Generation-recombination noise in multiple quantum well infrared photodetectors
    Ershov, M
    PHOTODETECTORS: MATERIALS AND DEVICES IV, 1999, 3629 : 121 - 128
  • [3] Langevin approach to the generation-recombination noise of a multi quantum well infrared photodetector
    Carbone, A
    Introzzi, R
    Liu, HC
    INFRARED PHYSICS & TECHNOLOGY, 2005, 47 (1-2) : 9 - 14
  • [4] PHOTOCONDUCTIVE GAIN AND GENERATION-RECOMBINATION NOISE IN QUANTUM-WELL INFRARED PHOTODETECTORS
    SHADRIN, VD
    MITIN, VV
    KOCHELAP, VA
    CHOI, KK
    JOURNAL OF APPLIED PHYSICS, 1995, 77 (04) : 1771 - 1775
  • [5] ON GENERATION-RECOMBINATION NOISE
    HOOGE, FN
    REN, L
    PHYSICA B, 1993, 191 (3-4): : 220 - 226
  • [6] PHOTOCONDUCTIVE GAIN AND GENERATION-RECOMBINATION NOISE IN MULTIPLE-QUANTUM-WELL INFRARED DETECTORS
    BECK, WA
    APPLIED PHYSICS LETTERS, 1993, 63 (26) : 3589 - 3591
  • [7] GENERATION-RECOMBINATION NOISE IN THE SATURATION REGIME OF MODFET STRUCTURES
    KUGLER, S
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1988, 35 (05) : 623 - 628
  • [8] Development of gallium nitride-based MEMS structures
    Stonas, AR
    Turner, KL
    DenBaars, SP
    Hu, EL
    BOSTON TRANSDUCERS'03: DIGEST OF TECHNICAL PAPERS, VOLS 1 AND 2, 2003, : 1156 - 1159
  • [9] Ohmic Contacts to Gallium Nitride-Based Structures
    Zhelannov, A. V.
    Ionov, A. S.
    Seleznev, B. I.
    Fedorov, D. G.
    SEMICONDUCTORS, 2020, 54 (03) : 317 - 321
  • [10] Ohmic Contacts to Gallium Nitride-Based Structures
    A. V. Zhelannov
    A. S. Ionov
    B. I. Seleznev
    D. G. Fedorov
    Semiconductors, 2020, 54 : 317 - 321