Non-contact photovoltage measurements in SiC

被引：0
|
作者：
Koshka, Y. [1 ]
Mazzola, M.S. [1 ]
机构：
[1] Mississippi State Univ, Mississippi State, United States
来源：
Materials Science Forum | 2000年 / 338卷
关键词：
Capacitance measurement - Electric conductance - Electrodes - Interfaces (materials) - Photovoltaic effects - Semiconductor doping - Semiconductor junctions - Ultraviolet radiation - Voltage measurement;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
A non-contact ac photovoltage technique is reported for measuring capacitance and conductance of a buried junction in SiC. The photovoltage signal is generated by applying a chopped UV light source and is detected with a specially designed capacitive electrode. The values of junction capacitance and conductance are extracted from the real and the imaginary parts of the photovoltage. A new non-contact approach to perform C-V measurements of doping near the junction interface is suggested.
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