Molded Insulated-Gate Bipolar Transistors

被引：0
|
作者：
机构：
来源：
Fuji Electric Review | 1994年 / 40卷 / 167期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
相关论文
共 50 条
  • [41] Estimation of Insulated-gate Bipolar Transistor Operating Temperature: Simulation and Experiment
    Bahun, Ivan
    Sunde, Viktor
    Jakopovic, Zeljko
    JOURNAL OF POWER ELECTRONICS, 2013, 13 (04) : 729 - 736
  • [42] INSULATED-GATE FIELD-EFFECT TRANSISTOR - BIPOLAR TRANSISTOR IN DISGUISE
    JOHNSON, EO
    RCA REVIEW, 1973, 34 (01): : 80 - 94
  • [43] New lateral insulated-gate bipolar transistor on silicon-on-insulator
    Choi, WB
    Sung, WJ
    Park, CI
    Kim, S
    Sung, MY
    JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2002, 40 (04) : 645 - 648
  • [44] TURNOFF TRANSIENT CHARACTERISTICS OF COMPLEMENTARY INSULATED-GATE BIPOLAR-TRANSISTOR
    LI, ZJ
    DU, J
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1994, 41 (12) : 2468 - 2471
  • [45] A transient model for insulated gate bipolar transistors (IGBTs)
    Ryu, Sehwan
    Lee, Myungsoo
    Hajji, Mohsen A.
    Ahn, Hyungkeun
    Han, Deukyoung
    El Nokali, Mahmoud
    INTERNATIONAL JOURNAL OF ELECTRONICS, 2008, 95 (04) : 399 - 409
  • [46] Evaluation of High-Voltage, High-Power 4H-SiC Insulated-Gate Bipolar Transistors
    Hinojosa, Miguel
    Ogunniyi, Aderinto
    O'Brien, Heather
    Bayne, Stephen B.
    Scozzie, Charles
    2014 IEEE INTERNATIONAL POWER MODULATOR AND HIGH VOLTAGE CONFERENCE (IPMHVC), 2014, : 101 - 104
  • [47] Evaluation of High-Voltage, High-Power 4H-SiC Insulated-Gate Bipolar Transistors
    Hinojosa, Miguel
    Ogunniyi, Aderinto
    O'Brien, Heather
    Bayne, Stephen B.
    Scozzie, Charles
    2014 IEEE INTERNATIONAL POWER MODULATOR AND HIGH VOLTAGE CONFERENCE (IPMHVC), 2014, : 705 - 708
  • [48] Parasitic extraction methodology for insulated gate bipolar transistors
    Trivedi, M
    Shenai, K
    IEEE TRANSACTIONS ON POWER ELECTRONICS, 2000, 15 (04) : 799 - 804
  • [49] GATE CURRENT IN ALINAS/GAINAS HETEROSTRUCTURE INSULATED-GATE FIELD-EFFECT TRANSISTORS (HIGFETS)
    KAMADA, M
    ISHIKAWA, H
    FENG, M
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1993, 40 (08) : 1358 - 1363
  • [50] Adjoint method for the optimization of insulated gate bipolar transistors
    Zhu, C.
    Andrei, P.
    AIP ADVANCES, 2019, 9 (09)
12345