Determination of the deformation potential constant of the conduction band in InSb by the electron mobility in the intrinsic range

被引:0
|
作者
机构
[1] Tukioka, Kunio
来源
Tukioka, Kunio | 1600年 / 30期
关键词
Semiconducting Indium Compounds;
D O I
暂无
中图分类号
学科分类号
摘要
引用
收藏
相关论文
共 50 条
  • [42] DETERMINATION OF DEFORMATION POTENTIAL CONSTANTS FROM PHOTOCONDUCTIVITY SPECTRA OF PARA-INSB UNDER UNIAXIAL PRESSURE
    VALYASHKO, EG
    KOSHELEV, OG
    PLESKACHEVA, TB
    IZVESTIYA VYSSHIKH UCHEBNYKH ZAVEDENII FIZIKA, 1976, (02): : 159 - 162
  • [43] DEFORMATION POTENTIAL OF THE CONDUCTION BAND OF SEMICONDUCTING SmS AND THE SEMICONDUCTOR-METAL TRANSITION IN SmS.
    Kaminskii, V.V.
    Kapustin, V.A.
    Smirnov, I.A.
    Soviet Physics, Solid State (English translation of Fizika Tverdogo Tela), 1980, 22 (12): : 2091 - 2093
  • [44] Conduction band structure and electron mobility in uniaxially strained Si via externally applied strain in nanomembranes
    Chen, Feng
    Euaruksakul, Chanan
    Liu, Zheng
    Himpsel, F. J.
    Liu, Feng
    Lagally, Max G.
    JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2011, 44 (32)
  • [46] Mechanical stress altered electron gate tunneling current and extraction of conduction band deformation potentials for germanium
    Choi, Youn Sung
    Lim, Ji-Song
    Numata, Toshinori
    Nishida, Toshikazu
    Thompson, Scott E.
    JOURNAL OF APPLIED PHYSICS, 2007, 102 (10)
  • [47] ON THE ELECTRON-MOBILITY IN GAAS SAMPLES WITH DOMINANT ELECTRICAL LEVEL 0.15 EV BELOW THE CONDUCTION-BAND
    HRIVNAK, L
    KEDRO, M
    ACTA PHYSICA SLOVACA, 1984, 34 (04) : 234 - 236
  • [48] DETERMINATION OF DEFORMATION POTENTIAL CONSTANTS FROM ELECTRON CYCLOTRON RESONANCE IN GERMANIUM AND SILICON
    MURASE, K
    ENJOIJI, K
    OTSUKA, E
    JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1970, 29 (05) : 1248 - &
  • [49] Impact of Fermi Level Pinning inside Conduction Band on Electron Mobility of InxGa1-xAs MOSFETs and Mobility Enhancement by Pinning Modulation
    Taoka, N.
    Yokoyama, M.
    Kim, S. H.
    Suzuki, R.
    Iida, R.
    Lee, S.
    Hoshii, T.
    Jevasuwan, W.
    Maeda, T.
    Yasuda, T.
    Ichikawa, O.
    Fukuhara, N.
    Hata, M.
    Takenaka, M.
    Takagi, S.
    2011 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM), 2011,
  • [50] DETERMINATION OF DEFORMATION POTENTIAL CONSTANT SIGMAU OF HEAVILY DOPED N-TYPE GE CRYSTALS
    BARANSKII, PI
    ELIZAROV, AI
    KOLOMOETS, VV
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1974, 8 (04): : 519 - 520